All MOSFET. QM07N60F Datasheet

 

QM07N60F Datasheet and Replacement


   Type Designator: QM07N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18.8 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO-220F
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QM07N60F Datasheet (PDF)

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QM07N60F

QM07N60F 1 2011-04-29 - 1 -N-Ch 600V Fast Switching MOSFETsGeneral Description Product SummeryThe QM07N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 1.35 7Amost of the synchronous buck converterapplications . Applications The QM07N60F meet the RoHS and

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FCA76N60N | SVGP20110NSTR | HUFA75823D3S | MXP4004AT | 7N80G-TF3-T | ME7423S-G | MEE42942-G

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