QM07N60F PDF and Equivalents Search

 

QM07N60F Specs and Replacement

Type Designator: QM07N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.8 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm

Package: TO-220F

QM07N60F substitution

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QM07N60F datasheet

 ..1. Size:348K  ubiq
 qm07n60f.pdf pdf_icon

QM07N60F

QM07N60F 1 2011-04-29 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM07N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 1.35 7A most of the synchronous buck converter applications . Applications The QM07N60F meet the RoHS and... See More ⇒

Detailed specifications: QM03N65D , QM03N65F , QM04N60F , QM04N65B , QM04N65D , QM04N65F , QM04N65F1 , QM06N65F , IRF540N , QM08N60F , QM09N50F , QM09N65B , QM09N65F , QM09N65P , QM10N60F , QM12N50F , QM12N65B .

Keywords - QM07N60F MOSFET specs

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