QM08N60F Specs and Replacement
Type Designator: QM08N60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220F
QM08N60F substitution
QM08N60F datasheet
qm08n60f.pdf
QM08N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM08N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 1.0 8A most of the synchronous buck converter applications . Applications The QM08N60F meet the RoHS and ... See More ⇒
Detailed specifications: QM03N65F , QM04N60F , QM04N65B , QM04N65D , QM04N65F , QM04N65F1 , QM06N65F , QM07N60F , IRF540 , QM09N50F , QM09N65B , QM09N65F , QM09N65P , QM10N60F , QM12N50F , QM12N65B , QM12N65F .
Keywords - QM08N60F MOSFET specs
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