All MOSFET. QM08N60F Datasheet


QM08N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: QM08N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 35 nC

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO-220F

QM08N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search


QM08N60F Datasheet (PDF)

0.1. qm08n60f.pdf Size:321K _ubiq


 QM08N60F 機密 第 1 頁 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM08N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 1.0 Ω 8A most of the synchronous buck converter applications . Applications The QM08N60F meet the RoHS and

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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