QM08N60F PDF and Equivalents Search

 

QM08N60F Specs and Replacement

Type Designator: QM08N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220F

QM08N60F substitution

- MOSFET ⓘ Cross-Reference Search

 

QM08N60F datasheet

 ..1. Size:321K  ubiq
 qm08n60f.pdf pdf_icon

QM08N60F

QM08N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM08N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 1.0 8A most of the synchronous buck converter applications . Applications The QM08N60F meet the RoHS and ... See More ⇒

Detailed specifications: QM03N65F , QM04N60F , QM04N65B , QM04N65D , QM04N65F , QM04N65F1 , QM06N65F , QM07N60F , IRF540 , QM09N50F , QM09N65B , QM09N65F , QM09N65P , QM10N60F , QM12N50F , QM12N65B , QM12N65F .

Keywords - QM08N60F MOSFET specs

 QM08N60F cross reference
 QM08N60F equivalent finder
 QM08N60F pdf lookup
 QM08N60F substitution
 QM08N60F replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.