All MOSFET. QM08N60F Datasheet

 

QM08N60F Datasheet and Replacement


   Type Designator: QM08N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 35 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220F
 

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QM08N60F Datasheet (PDF)

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QM08N60F

QM08N60F 1 2011-11-15 - 1 -N-Ch 600V Fast Switching MOSFETsGeneral Description Product SummeryThe QM08N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 1.0 8Amost of the synchronous buck converterapplications . Applications The QM08N60F meet the RoHS and

Datasheet: QM03N65F , QM04N60F , QM04N65B , QM04N65D , QM04N65F , QM04N65F1 , QM06N65F , QM07N60F , IRF540 , QM09N50F , QM09N65B , QM09N65F , QM09N65P , QM10N60F , QM12N50F , QM12N65B , QM12N65F .

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