All MOSFET. QM14N65F Datasheet

 

QM14N65F Datasheet and Replacement


   Type Designator: QM14N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.8 nS
   Cossⓘ - Output Capacitance: 157 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220F
 

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QM14N65F Datasheet (PDF)

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QM14N65F

QM14N65F 1 2011-07-22 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM14N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 0.65 14Amost of the synchronous buck converterapplications . Applications The QM14N65F meet the RoHS an

Datasheet: QM09N65F , QM09N65P , QM10N60F , QM12N50F , QM12N65B , QM12N65F , QM12N65P , QM12N70F , AON6414A , QM2401C1 , QM2401D , QM2401G , QM2401J , QM2401K , QM2401V , QM2402C1 , QM2402J .

History: IRF513 | P1503BVG

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