All MOSFET. PHP44N06LT Datasheet

 

PHP44N06LT Datasheet and Replacement


   Type Designator: PHP44N06LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 27.5 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOT78
 

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PHP44N06LT Datasheet (PDF)

 ..1. Size:65K  philips
 php44n06lt 3.pdf pdf_icon

PHP44N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP44N06LT, PHB44N06LT, PHD44N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 44 A Stable off-state characteristics High thermal cycling performance RDS(ON) 28 m (VGS = 5 V)g Low thermal

 6.1. Size:53K  philips
 php44n06t 1.pdf pdf_icon

PHP44N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP44N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 44 Afeatures very low on-state r

Datasheet: PHP3055E , PHP3055L , PHP33N10 , PHP37N06LT , PHP3N40E , PHP3N50E , PHP3N60E , PHP42N03LT , RU6888R , PHP4N60E , PHP4ND40E , PHP50N03LT , PHP50N06LT , PHP55N03LT , PHP60N06LT , PHP65N06LT , PHP69N03LT .

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