PHP44N06LT MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP44N06LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 44 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27.5 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT78
PHP44N06LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP44N06LT Datasheet (PDF)
php44n06lt 3.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP44N06LT, PHB44N06LT, PHD44N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 44 A Stable off-state characteristics High thermal cycling performance RDS(ON) 28 m (VGS = 5 V)g Low thermal
php44n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP44N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 44 Afeatures very low on-state r
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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