PHP44N06LT Datasheet and Replacement
Type Designator: PHP44N06LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT78
PHP44N06LT substitution
PHP44N06LT Datasheet (PDF)
php44n06lt 3.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP44N06LT, PHB44N06LT, PHD44N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 44 A Stable off-state characteristics High thermal cycling performance RDS(ON) 28 m (VGS = 5 V)g Low thermal
php44n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP44N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 44 Afeatures very low on-state r
Datasheet: PHP3055E , PHP3055L , PHP33N10 , PHP37N06LT , PHP3N40E , PHP3N50E , PHP3N60E , PHP42N03LT , AO3400A , PHP4N60E , PHP4ND40E , PHP50N03LT , PHP50N06LT , PHP55N03LT , PHP60N06LT , PHP65N06LT , PHP69N03LT .
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