All MOSFET. QM2517C1 Datasheet

 

QM2517C1 MOSFET. Datasheet pdf. Equivalent

Type Designator: QM2517C1

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.33 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 2.9 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 33 pF

Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm

Package: SOT-363

QM2517C1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QM2517C1 Datasheet (PDF)

0.1. qm2517c1.pdf Size:350K _ubiq

QM2517C1
QM2517C1

QM2517C1 Dual P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2517C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 240mΩ -1A for most of the small power switching and load switch applications. Applications The QM2517C1 meet the RoHS and Green Produ

9.1. qm2518c1.pdf Size:335K _ubiq

QM2517C1
QM2517C1

QM2518C1 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2518C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 90mΩ 1.52A for most of the small power switching and load switch applications. Applications The QM2518C1 meet the RoHS and Green Prod

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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