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QM2517C1 Spec and Replacement


   Type Designator: QM2517C1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: SOT-363
 

 QM2517C1 substitution

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QM2517C1 Specs

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QM2517C1

QM2517C1 Dual P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2517C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 240m -1A for most of the small power switching and load switch applications. Applications The QM2517C1 meet the RoHS and Green Produ... See More ⇒

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QM2517C1

QM2518C1 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2518C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 90m 1.52A for most of the small power switching and load switch applications. Applications The QM2518C1 meet the RoHS and Green Prod... See More ⇒

Detailed specifications: QM2427S , QM2429S , QM2502M9 , QM2502S , QM2502W , QM2504W , QM2506W , QM2507W , 7N60 , QM2518C1 , QM2520C1 , QM2601S , QM2602S , QM2604V , QM2605S , QM2605V , QM2606C1 .

Keywords - QM2517C1 MOSFET specs

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