QM2520C1 PDF and Equivalents Search

 

QM2520C1 Specs and Replacement

Type Designator: QM2520C1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29.2 nS

Cossⓘ - Output Capacitance: 43.6 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: SOT-363

QM2520C1 substitution

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QM2520C1 datasheet

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QM2520C1

QM2520C1 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2520C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 115m 1.4 A for most of the small power switching and load switch applications. Applications The QM2520C1 meet the RoHS and Green Pro... See More ⇒

Detailed specifications: QM2502M9 , QM2502S , QM2502W , QM2504W , QM2506W , QM2507W , QM2517C1 , QM2518C1 , IRFZ46N , QM2601S , QM2602S , QM2604V , QM2605S , QM2605V , QM2606C1 , QM2607C1 , QM2608N8 .

Keywords - QM2520C1 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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