All MOSFET. QM2520C1 Datasheet


QM2520C1 MOSFET. Datasheet pdf. Equivalent

Type Designator: QM2520C1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.33 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 1.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 3.3 nC

Rise Time (tr): 29.2 nS

Drain-Source Capacitance (Cd): 43.6 pF

Maximum Drain-Source On-State Resistance (Rds): 0.115 Ohm

Package: SOT-363

QM2520C1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


QM2520C1 Datasheet (PDF)

0.1. qm2520c1.pdf Size:312K _ubiq


 QM2520C1 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2520C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 115mΩ 1.4 A for most of the small power switching and load switch applications. Applications The QM2520C1 meet the RoHS and Green Pro

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .


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