All MOSFET. QM2520C1 Datasheet

 

QM2520C1 Datasheet and Replacement


   Type Designator: QM2520C1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29.2 nS
   Cossⓘ - Output Capacitance: 43.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: SOT-363
 

 QM2520C1 substitution

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QM2520C1 Datasheet (PDF)

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QM2520C1

QM2520C1 Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2520C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 115m 1.4 Afor most of the small power switching and load switch applications. Applications The QM2520C1 meet the RoHS and Green Pro

Datasheet: QM2502M9 , QM2502S , QM2502W , QM2504W , QM2506W , QM2507W , QM2517C1 , QM2518C1 , STP65NF06 , QM2601S , QM2602S , QM2604V , QM2605S , QM2605V , QM2606C1 , QM2607C1 , QM2608N8 .

History: CEB6086 | AP60WN2K3H

Keywords - QM2520C1 MOSFET datasheet

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