All MOSFET. QM2710D Datasheet

 

QM2710D Datasheet and Replacement


   Type Designator: QM2710D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28.6 nS
   Cossⓘ - Output Capacitance: 68.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO-252
 

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QM2710D Datasheet (PDF)

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QM2710D

QM2710D N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2710D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 22Afor most of the small power switching and load switch applications. Applications The QM2710D meet the RoHS and Green Product require

Datasheet: QM2602S , QM2604V , QM2605S , QM2605V , QM2606C1 , QM2607C1 , QM2608N8 , QM2702D , HY1906P , QM2N7002E3K1 , QM3001D , QM3001G , QM3001J , QM3001S , QM3001U , QM3001V , QM3002AN3 .

Keywords - QM2710D MOSFET datasheet

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