All MOSFET. QM2710D Datasheet


QM2710D MOSFET. Datasheet pdf. Equivalent

Type Designator: QM2710D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 21 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 8.5 nC

Rise Time (tr): 28.6 nS

Drain-Source Capacitance (Cd): 68.7 pF

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: TO-252

QM2710D Transistor Equivalent Substitute - MOSFET Cross-Reference Search


QM2710D Datasheet (PDF)

0.1. qm2710d.pdf Size:349K _ubiq


QM2710D N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2710D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28mΩ 22A for most of the small power switching and load switch applications. Applications The QM2710D meet the RoHS and Green Product require

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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