QM2710D PDF and Equivalents Search

 

QM2710D Specs and Replacement

Type Designator: QM2710D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28.6 nS

Cossⓘ - Output Capacitance: 68.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO-252

QM2710D substitution

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QM2710D datasheet

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QM2710D

QM2710D N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2710D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 22A for most of the small power switching and load switch applications. Applications The QM2710D meet the RoHS and Green Product require... See More ⇒

Detailed specifications: QM2602S , QM2604V , QM2605S , QM2605V , QM2606C1 , QM2607C1 , QM2608N8 , QM2702D , AOD4184A , QM2N7002E3K1 , QM3001D , QM3001G , QM3001J , QM3001S , QM3001U , QM3001V , QM3002AN3 .

Keywords - QM2710D MOSFET specs

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