QM2N7002E3K1 Datasheet. Specs and Replacement

Type Designator: QM2N7002E3K1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.8 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT-23S

QM2N7002E3K1 substitution

- MOSFET ⓘ Cross-Reference Search

 

QM2N7002E3K1 datasheet

 ..1. Size:307K  ubiq
 qm2n7002e3k1.pdf pdf_icon

QM2N7002E3K1

QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 60V 3 180mA charge for most of the small power switching and load switch applications. Applications The QM2N7002E3K1 meet the RoHS and Green ... See More ⇒

Detailed specifications: QM2604V, QM2605S, QM2605V, QM2606C1, QM2607C1, QM2608N8, QM2702D, QM2710D, AO4407A, QM3001D, QM3001G, QM3001J, QM3001S, QM3001U, QM3001V, QM3002AN3, QM3002ANA

Keywords - QM2N7002E3K1 MOSFET specs

 QM2N7002E3K1 cross reference

 QM2N7002E3K1 equivalent finder

 QM2N7002E3K1 pdf lookup

 QM2N7002E3K1 substitution

 QM2N7002E3K1 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.