All MOSFET. QM2N7002E3K1 Datasheet

 

QM2N7002E3K1 Datasheet and Replacement


   Type Designator: QM2N7002E3K1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 0.18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.8 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT-23S
 

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QM2N7002E3K1 Datasheet (PDF)

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QM2N7002E3K1

QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 60V 3 180mAcharge for most of the small power switching and load switch applications. Applications The QM2N7002E3K1 meet the RoHS and Green

Datasheet: QM2604V , QM2605S , QM2605V , QM2606C1 , QM2607C1 , QM2608N8 , QM2702D , QM2710D , BS170 , QM3001D , QM3001G , QM3001J , QM3001S , QM3001U , QM3001V , QM3002AN3 , QM3002ANA .

Keywords - QM2N7002E3K1 MOSFET datasheet

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