All MOSFET. QM2N7002E3K1 Datasheet


QM2N7002E3K1 MOSFET. Datasheet pdf. Equivalent

Type Designator: QM2N7002E3K1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 0.18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 1.8 nS

Drain-Source Capacitance (Cd): 12 pF

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: SOT-23S

QM2N7002E3K1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


QM2N7002E3K1 Datasheet (PDF)

0.1. qm2n7002e3k1.pdf Size:307K _ubiq


 QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 60V 3Ω 180mA charge for most of the small power switching and load switch applications. Applications The QM2N7002E3K1 meet the RoHS and Green

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .


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