All MOSFET. PHP65N06LT Datasheet

 

PHP65N06LT Datasheet and Replacement


   Type Designator: PHP65N06LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOT78
 

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PHP65N06LT Datasheet (PDF)

 ..1. Size:58K  philips
 php65n06lt 2.pdf pdf_icon

PHP65N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP65N06LT, PHB65N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 63 A Stable off-state characteristics High thermal cycling performance RDS(ON) 18 m (VGS = 5 V)g Low thermal resistance

 6.1. Size:52K  philips
 php65n06t 1.pdf pdf_icon

PHP65N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP65N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 63 Afeatures very low on-state r

Datasheet: PHP42N03LT , PHP44N06LT , PHP4N60E , PHP4ND40E , PHP50N03LT , PHP50N06LT , PHP55N03LT , PHP60N06LT , IRF1405 , PHP69N03LT , PHP6N10E , PHP6N50E , PHP6N60E , PHP6ND50E , PHP7N60E , PHP80N06LT , PHP87N03LT .

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