PHP65N06LT Specs and Replacement

Type Designator: PHP65N06LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Id| ⓘ - Maximum Drain Current: 63 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOT78

PHP65N06LT substitution

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PHP65N06LT datasheet

 ..1. Size:58K  philips
 php65n06lt 2.pdf pdf_icon

PHP65N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP65N06LT, PHB65N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 63 A Stable off-state characteristics High thermal cycling performance RDS(ON) 18 m (VGS = 5 V) g Low thermal resistance ... See More ⇒

 6.1. Size:52K  philips
 php65n06t 1.pdf pdf_icon

PHP65N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP65N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 63 A features very low on-state r... See More ⇒

Detailed specifications: PHP42N03LT, PHP44N06LT, PHP4N60E, PHP4ND40E, PHP50N03LT, PHP50N06LT, PHP55N03LT, PHP60N06LT, IRF830, PHP69N03LT, PHP6N10E, PHP6N50E, PHP6N60E, PHP6ND50E, PHP7N60E, PHP80N06LT, PHP87N03LT

Keywords - PHP65N06LT MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs