PHP69N03LT Datasheet and Replacement
Type Designator: PHP69N03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 69 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOT78
PHP69N03LT substitution
PHP69N03LT Datasheet (PDF)
phb69n03lt phd69n03lt php69n03lt 7.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP69N03LT, PHB69N03LT Logic level FET PHD69N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 69 A Low thermal resistance Logic level compatible RDS(ON) 12 m (VGS = 10 V)gRDS(ON) 14 m (VGS
php69n03t 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP69N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 69 Afeatures very low on-state r
Datasheet: PHP44N06LT , PHP4N60E , PHP4ND40E , PHP50N03LT , PHP50N06LT , PHP55N03LT , PHP60N06LT , PHP65N06LT , EMB04N03H , PHP6N10E , PHP6N50E , PHP6N60E , PHP6ND50E , PHP7N60E , PHP80N06LT , PHP87N03LT , PHP8N50E .
History: PHP60N06LT | SML6030BN | PHP6N50E | SML601R6KN | SSS5N60 | SML601R3KN | 60N04
Keywords - PHP69N03LT MOSFET datasheet
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History: PHP60N06LT | SML6030BN | PHP6N50E | SML601R6KN | SSS5N60 | SML601R3KN | 60N04



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