PHP69N03LT Specs and Replacement

Type Designator: PHP69N03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOT78

PHP69N03LT substitution

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PHP69N03LT datasheet

 ..1. Size:111K  philips
 phb69n03lt phd69n03lt php69n03lt 7.pdf pdf_icon

PHP69N03LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP69N03LT, PHB69N03LT Logic level FET PHD69N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 69 A Low thermal resistance Logic level compatible RDS(ON) 12 m (VGS = 10 V) g RDS(ON) 14 m (VGS... See More ⇒

 6.1. Size:49K  philips
 php69n03t 2.pdf pdf_icon

PHP69N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP69N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 69 A features very low on-state r... See More ⇒

Detailed specifications: PHP44N06LT, PHP4N60E, PHP4ND40E, PHP50N03LT, PHP50N06LT, PHP55N03LT, PHP60N06LT, PHP65N06LT, IRLB3034, PHP6N10E, PHP6N50E, PHP6N60E, PHP6ND50E, PHP7N60E, PHP80N06LT, PHP87N03LT, PHP8N50E

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