All MOSFET. QM3036D Datasheet

 

QM3036D MOSFET. Datasheet pdf. Equivalent


   Type Designator: QM3036D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 82 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.4 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 391 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO-252

 QM3036D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QM3036D Datasheet (PDF)

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 qm3036d.pdf

QM3036D QM3036D

QM3036D N-Ch 25V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3036D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 25V 4.3m 82Afor most of the synchronous buck converter applications . Applications The QM3036D meet the RoHS and Green Product requirement , 1

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: MPSY65M170 | FDB035N10A | UT110N03 | VBA1615 | AP02N60P-HF | VBA2216

 

 
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