QM3036D Datasheet and Replacement
Type Designator: QM3036D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 82 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 391 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: TO-252
QM3036D substitution
QM3036D Datasheet (PDF)
qm3036d.pdf

QM3036D N-Ch 25V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3036D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 25V 4.3m 82Afor most of the synchronous buck converter applications . Applications The QM3036D meet the RoHS and Green Product requirement , 1
Datasheet: QM3018P , QM3020P , QM3022D , QM3022M6 , QM3024D , QM3024M6 , QM3024N3 , QM3024S , AON7403 , QM3201S , QM3202M3 , QM3202S , QM3203S , QM3206S , QM3208S , QM3214S , QM3301S .
History: 3N45 | IXFT80N10 | SIHF22N65E | GP2M002A060XG | DAMH300N150 | IXTT8P50 | RQA0009SXAQS
Keywords - QM3036D MOSFET datasheet
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History: 3N45 | IXFT80N10 | SIHF22N65E | GP2M002A060XG | DAMH300N150 | IXTT8P50 | RQA0009SXAQS



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