All MOSFET. QM3214S Datasheet

 

QM3214S MOSFET. Datasheet pdf. Equivalent


   Type Designator: QM3214S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.63 nC
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8

 QM3214S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QM3214S Datasheet (PDF)

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 qm3214s.pdf

QM3214S QM3214S

QM3214S Dual N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3214S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 12m 9Afor most of the synchronous buck converter applications . Applications The QM3214S meet the RoHS and Green Product requirement

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: MXP6010CTS | FCD900N60Z

 

 
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