PHP7N60E Datasheet and Replacement
Type Designator: PHP7N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT78
PHP7N60E substitution
PHP7N60E Datasheet (PDF)
php7n60e phb7n60e phw7n60e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 7 Ag Low thermal resistanceRDS(ON) 1.2 sGENERAL DESCRIPTIONN-chan
Datasheet: PHP55N03LT , PHP60N06LT , PHP65N06LT , PHP69N03LT , PHP6N10E , PHP6N50E , PHP6N60E , PHP6ND50E , 2SK3918 , PHP80N06LT , PHP87N03LT , PHP8N50E , PHP8ND50E , PHT11N06LT , PHT6N03LT , PHT6N06LT , PHT8N06LT .
History: CS8N90FA9HD
Keywords - PHP7N60E MOSFET datasheet
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History: CS8N90FA9HD



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