PHP80N06LT Specs and Replacement

Type Designator: PHP80N06LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOT78

PHP80N06LT substitution

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PHP80N06LT datasheet

 ..1. Size:59K  philips
 php80n06lt 2.pdf pdf_icon

PHP80N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP80N06LT, PHB80N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 14 m (VGS = 5 V) g Low thermal resistance ... See More ⇒

 6.1. Size:53K  philips
 php80n06t 1.pdf pdf_icon

PHP80N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP80N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC)1 75 A features very low on-state ... See More ⇒

Detailed specifications: PHP60N06LT, PHP65N06LT, PHP69N03LT, PHP6N10E, PHP6N50E, PHP6N60E, PHP6ND50E, PHP7N60E, RU7088R, PHP87N03LT, PHP8N50E, PHP8ND50E, PHT11N06LT, PHT6N03LT, PHT6N06LT, PHT8N06LT, PHW11N50E

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.