All MOSFET. PHT11N06LT Datasheet

 

PHT11N06LT Datasheet and Replacement


   Type Designator: PHT11N06LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 8.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 13 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 10.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT223
 

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PHT11N06LT Datasheet (PDF)

 ..1. Size:55K  philips
 pht11n06lt 2.pdf pdf_icon

PHT11N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHT11N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 10.7 AThe device features very low

 6.1. Size:60K  philips
 pht11n06t 1.pdf pdf_icon

PHT11N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHT11N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 10.7 AUsing trench technolo

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History: PHT8N06LT

Keywords - PHT11N06LT MOSFET datasheet

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