PHT11N06LT Datasheet. Specs and Replacement

Type Designator: PHT11N06LT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 8.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 13 V

|Id| ⓘ - Maximum Drain Current: 10.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT223

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PHT11N06LT datasheet

 ..1. Size:55K  philips
 pht11n06lt 2.pdf pdf_icon

PHT11N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHT11N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 C 10.7 A The device features very low ... See More ⇒

 6.1. Size:60K  philips
 pht11n06t 1.pdf pdf_icon

PHT11N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHT11N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 C 10.7 A Using trench technolo... See More ⇒

Detailed specifications: PHP6N50E, PHP6N60E, PHP6ND50E, PHP7N60E, PHP80N06LT, PHP87N03LT, PHP8N50E, PHP8ND50E, IRF9640, PHT6N03LT, PHT6N06LT, PHT8N06LT, PHW11N50E, PHW14N50E, PHW20N50E, PHW7N60E, PHW8N50E

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.