QM6020P Datasheet and Replacement
Type Designator: QM6020P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 242 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 2415 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO-220
QM6020P substitution
QM6020P Datasheet (PDF)
qm6020p.pdf

QM6020P N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6020P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 2.8m 242Afor most of the synchronous buck converter applications . Applications The QM6020P meet the RoHS and Green Product requirement , 1
qm6020ap.pdf

QM6020AP N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6020AP is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 3.8m 198Afor most of the synchronous buck converter applications . Applications The QM6020AP meet the RoHS and Green Product requirement
Datasheet: QM6015B , QM6015D , QM6015S , QM6016D , QM6016F , QM6016P , QM6016S , QM6020AP , STP80NF70 , QM6204S , QM6208S , QM6208V , QM6214Q , QM6214S , QM6301S , QM7018AD , QM7020P .
History: IPD25DP06NM | QM2710D
Keywords - QM6020P MOSFET datasheet
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QM6020P substitution
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History: IPD25DP06NM | QM2710D



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