All MOSFET. QM6020P Datasheet

 

QM6020P Datasheet and Replacement


   Type Designator: QM6020P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 242 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 2415 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO-220
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QM6020P Datasheet (PDF)

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QM6020P

QM6020P N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6020P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 2.8m 242Afor most of the synchronous buck converter applications . Applications The QM6020P meet the RoHS and Green Product requirement , 1

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QM6020P

QM6020AP N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6020AP is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 3.8m 198Afor most of the synchronous buck converter applications . Applications The QM6020AP meet the RoHS and Green Product requirement

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFIZ44G | SL2343 | 2SK2059L | IRHLNA77064 | 12P10G-TQ2-R | WSD1216DN22 | BSD214SN

Keywords - QM6020P MOSFET datasheet

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