QM8014D MOSFET. Datasheet pdf. Equivalent
Type Designator: QM8014D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 11.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18.6 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-252
QM8014D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM8014D Datasheet (PDF)
qm8014d.pdf
QM8014D N-Ch 80V Fast Switching MOSFETsGeneral Description Product SummeryThe QM8014D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 80V 100m 11.8Afor most of the synchronous buck converter applications . Applications The QM8014D meet the RoHS and Green Product requirement ,
qm8014u.pdf
QM8014U N-Ch 80V Fast Switching MOSFETsGeneral Description Product SummeryThe QM8014U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 80V 100m 11.8Afor most of the synchronous buck converter applications . Applications The QM8014U meet the RoHS and Green Product requirement ,
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STP5N30L | FQB2P25TM
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