QM8205V Datasheet. Specs and Replacement

Type Designator: QM8205V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.8 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TSOP6

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QM8205V datasheet

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QM8205V

QM8205V Dual N-Ch Fast Switching MOSFETs General Description Product Summery The QM8205V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 6A for most of the small power switching and load switch applications. The QM8205V meet the RoHS and Green Product requirement with full... See More ⇒

Detailed specifications: QM6208V, QM6214Q, QM6214S, QM6301S, QM7018AD, QM7020P, QM8014D, QM8014U, 2N60, QN7002, QS5K2, QS5U12, QS5U13, QS5U16, QS5U17, QS5U21, QS5U23

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