QM8205V MOSFET. Datasheet pdf. Equivalent
Type Designator: QM8205V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.4 nC
trⓘ - Rise Time: 9.8 nS
Cossⓘ - Output Capacitance: 66 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TSOP6
QM8205V Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM8205V Datasheet (PDF)
..1. Size:355K ubiq
qm8205v.pdf
qm8205v.pdf
QM8205V Dual N-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM8205V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 6Afor most of the small power switching and load switch applications. The QM8205V meet the RoHS and Green Product requirement with full
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