QS5U17 Datasheet. Specs and Replacement

Type Designator: QS5U17

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TSMT5

QS5U17 substitution

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QS5U17 datasheet

 ..1. Size:69K  rohm
 qs5u17.pdf pdf_icon

QS5U17

QS5U17 Transistors 2.5V Drive Nch+SBD MOS FET QS5U17 External dimensions (Unit mm) Structure Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) Features 1) The QS5U17 combines Nch MOSFET with a 0 0.1 (1) (2) (3) Schottky barrier diode in a single TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switc... See More ⇒

 9.1. Size:69K  rohm
 qs5u13.pdf pdf_icon

QS5U17

QS5U13 Transistors 2.5V Drive Nch+SBD MOS FET QS5U13 External dimensions (Unit mm) Structure Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) Features 1) The QS5U13 combines Nch MOSFET with a 0 0.1 (1) (2) (3) Schottky barrier diode in a single TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switc... See More ⇒

 9.2. Size:69K  rohm
 qs5u12.pdf pdf_icon

QS5U17

QS5U12 Transistors 2.5V Drive Nch+SBD MOS FET QS5U12 External dimensions (Unit mm) Structure Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) Features 1) The QS5U12 combines Nch MOSFET with a 0 0.1 (1) (2) (3) Schottky barrier diode in a single TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switc... See More ⇒

 9.3. Size:69K  rohm
 qs5u16.pdf pdf_icon

QS5U17

QS5U16 Transistors 2.5V Drive Nch+SBD MOS FET QS5U16 External dimensions (Unit mm) Structure Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) Features 1) The QS5U16 combines Nch MOSFET with a 0 0.1 (1) (2) (3) Schottky barrier diode in a single TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switc... See More ⇒

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Detailed specifications: QM8014D, QM8014U, QM8205V, QN7002, QS5K2, QS5U12, QS5U13, QS5U16, STP65NF06, QS5U21, QS5U23, QS5U26, QS5U27, QS5U33, QS5U34, QS5U36, QS6J11

Keywords - QS5U17 MOSFET specs

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