All MOSFET. QS6J11 Datasheet

 

QS6J11 Datasheet and Replacement


   Type Designator: QS6J11
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TSMT6
 

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QS6J11 Datasheet (PDF)

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QS6J11

QS6J11 Dual Pch -12V -2.0A Power MOSFET DatasheetlOutline(6) VDSS TSMT6 -12V(5) (4) RDS(on) (Max.)105mWID-2A (1) (2) PD1.25W (3) lFeatures lInner circuit1) Low on - resistance.(1) Tr1 Gate (4) Tr2 Drain 2) Built-in G-S Protection Diode.(2) Tr2 Source (5) Tr1 Source (3) Tr2 Gate (6) Tr1 Drain 3) Small Surface Mount Package (TSMT6).*1 ESD PROTECTION DIO

Datasheet: QS5U17 , QS5U21 , QS5U23 , QS5U26 , QS5U27 , QS5U33 , QS5U34 , QS5U36 , 8N60 , QS6K1 , QS6K21 , QS6M3 , QS6M4 , QS6U22 , QS6U24 , QS8F2 , QS8J11 .

History: PMV25ENEA | DMG8880LSS | IXFV110N10P | CS65N20-30 | IPB120N08S4-03 | C3M0065100K | SQM90142E

Keywords - QS6J11 MOSFET datasheet

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