All MOSFET. QS6J11 Datasheet

 

QS6J11 Datasheet and Replacement


   Type Designator: QS6J11
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TSMT6
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QS6J11 Datasheet (PDF)

 ..1. Size:558K  rohm
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QS6J11

QS6J11 Dual Pch -12V -2.0A Power MOSFET DatasheetlOutline(6) VDSS TSMT6 -12V(5) (4) RDS(on) (Max.)105mWID-2A (1) (2) PD1.25W (3) lFeatures lInner circuit1) Low on - resistance.(1) Tr1 Gate (4) Tr2 Drain 2) Built-in G-S Protection Diode.(2) Tr2 Source (5) Tr1 Source (3) Tr2 Gate (6) Tr1 Drain 3) Small Surface Mount Package (TSMT6).*1 ESD PROTECTION DIO

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: 2SJ473-01S | IRF7759L2TR1PBF

Keywords - QS6J11 MOSFET datasheet

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