QS6J11 Datasheet. Specs and Replacement

Type Designator: QS6J11

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TSMT6

QS6J11 substitution

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QS6J11 datasheet

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QS6J11

QS6J11 Dual Pch -12V -2.0A Power MOSFET Datasheet lOutline (6) VDSS TSMT6 -12V (5) (4) RDS(on) (Max.) 105mW ID -2A (1) (2) PD 1.25W (3) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Gate (4) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr2 Source (5) Tr1 Source (3) Tr2 Gate (6) Tr1 Drain 3) Small Surface Mount Package (TSMT6). *1 ESD PROTECTION DIO... See More ⇒

Detailed specifications: QS5U17, QS5U21, QS5U23, QS5U26, QS5U27, QS5U33, QS5U34, QS5U36, IRFB7545, QS6K1, QS6K21, QS6M3, QS6M4, QS6U22, QS6U24, QS8F2, QS8J11

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.