QS6K1 Datasheet. Specs and Replacement
Type Designator: QS6K1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.238 Ohm
Package: TSMT6
QS6K1 substitution
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QS6K1 datasheet
qs6k1.pdf
QS6K1 Transistors 2.5V Drive Nch+Nch MOS FET QS6K1 Structure External dimensions (Unit mm) Silicon N-channel TSMT6 MOS FET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) Low on-resistance. 0 0.1 (1) (2) (3) 2) Built-in G-S Protection Diode. 1pin mark 3) Small and Surface Mount Package (TSMT6). 0.16 0.4 Each lead has same dimensions Applicatio... See More ⇒
Detailed specifications: QS5U21, QS5U23, QS5U26, QS5U27, QS5U33, QS5U34, QS5U36, QS6J11, AON7403, QS6K21, QS6M3, QS6M4, QS6U22, QS6U24, QS8F2, QS8J11, QS8J12
Keywords - QS6K1 MOSFET specs
QS6K1 cross reference
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