All MOSFET. QS6K1 Datasheet

 

QS6K1 Datasheet and Replacement


   Type Designator: QS6K1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.238 Ohm
   Package: TSMT6
 

 QS6K1 substitution

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QS6K1 Datasheet (PDF)

 ..1. Size:59K  rohm
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QS6K1

QS6K1 Transistors 2.5V Drive Nch+Nch MOS FET QS6K1 Structure External dimensions (Unit : mm) Silicon N-channel TSMT6MOS FET 1.0MAX2.90.851.9 0.95 0.95 0.7(6) (5) (4) Features 1) Low on-resistance. 0~0.1(1) (2) (3)2) Built-in G-S Protection Diode. 1pin mark3) Small and Surface Mount Package (TSMT6). 0.160.4Each lead has same dimensions Applicatio

Datasheet: QS5U21 , QS5U23 , QS5U26 , QS5U27 , QS5U33 , QS5U34 , QS5U36 , QS6J11 , EMB04N03H , QS6K21 , QS6M3 , QS6M4 , QS6U22 , QS6U24 , QS8F2 , QS8J11 , QS8J12 .

History: IRFSL3107PBF | AON6206

Keywords - QS6K1 MOSFET datasheet

 QS6K1 cross reference
 QS6K1 equivalent finder
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