All MOSFET. PHT8N06LT Datasheet

 

PHT8N06LT Datasheet and Replacement


   Type Designator: PHT8N06LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 8.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 13 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT223
 

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PHT8N06LT Datasheet (PDF)

 ..1. Size:51K  philips
 pht8n06lt.pdf pdf_icon

PHT8N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHT8N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. The device features very ID Drain current 7.5 Alow on-state resistance

 7.1. Size:58K  philips
 pht8n06t 1.pdf pdf_icon

PHT8N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHT8N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technolgy ID Drain current 7.5 Athe device feature

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History: 2SK3290 | 2SK3288 | 7410 | FQP4N80

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