PHT8N06LT Specs and Replacement
Type Designator: PHT8N06LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 8.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 13 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOT223
PHT8N06LT substitution
- MOSFET ⓘ Cross-Reference Search
PHT8N06LT datasheet
pht8n06lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT8N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. The device features very ID Drain current 7.5 A low on-state resistance ... See More ⇒
pht8n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT8N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technolgy ID Drain current 7.5 A the device feature... See More ⇒
Detailed specifications: PHP7N60E, PHP80N06LT, PHP87N03LT, PHP8N50E, PHP8ND50E, PHT11N06LT, PHT6N03LT, PHT6N06LT, IRF730, PHW11N50E, PHW14N50E, PHW20N50E, PHW7N60E, PHW8N50E, PHW8ND50E, PHW9N60E, PHX2N50E
Keywords - PHT8N06LT MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
