QS6K21 Datasheet. Specs and Replacement

Type Designator: QS6K21

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TSMT6

QS6K21 substitution

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QS6K21 datasheet

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QS6K21

QS6K21 Nch 45V 1A Power MOSFET Datasheet lOutline (6) VDSS 45V (5) TSMT6 (4) RDS(on) (Max.) 420mW (1) ID 1A (2) PD 1.25W (3) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Gate (2) Tr2 Source 2) Built-in G-S Protection Diode. (3) Tr2 Gate (4) Tr2 Drain 3) Small Surface Mount Package (TSMT6). (5) Tr1 Source (6) Tr1 Drain 4) Pb-free lead plating ... See More ⇒

Detailed specifications: QS5U23, QS5U26, QS5U27, QS5U33, QS5U34, QS5U36, QS6J11, QS6K1, K2611, QS6M3, QS6M4, QS6U22, QS6U24, QS8F2, QS8J11, QS8J12, QS8J13

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