All MOSFET. QS6M3 Datasheet

 

QS6M3 Datasheet and Replacement


   Type Designator: QS6M3
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: TSMT6
 

 QS6M3 substitution

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QS6M3 Datasheet (PDF)

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QS6M3

QS6M3 Transistors 2.5V Drive Nch+Pch MOSFET QS6M3 Dimensions (Unit : mm) Structure Silicon N-channel / P-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low on-resistance. 2) Built-in G-S Protection Diode. 0~0.1(1) (2) (3)3) Small Surface Mount Package (TSMT6). 1pin mark 0.160.4Each lead has same dimensions Application Abb

Datasheet: QS5U26 , QS5U27 , QS5U33 , QS5U34 , QS5U36 , QS6J11 , QS6K1 , QS6K21 , 2SK3918 , QS6M4 , QS6U22 , QS6U24 , QS8F2 , QS8J11 , QS8J12 , QS8J13 , QS8J2 .

History: SI4622DY | VBZL80N03

Keywords - QS6M3 MOSFET datasheet

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