QS6M3 Datasheet. Specs and Replacement

Type Designator: QS6M3

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TSMT6

QS6M3 substitution

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QS6M3 datasheet

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QS6M3

QS6M3 Transistors 2.5V Drive Nch+Pch MOSFET QS6M3 Dimensions (Unit mm) Structure Silicon N-channel / P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low on-resistance. 2) Built-in G-S Protection Diode. 0 0.1 (1) (2) (3) 3) Small Surface Mount Package (TSMT6). 1pin mark 0.16 0.4 Each lead has same dimensions Application Abb... See More ⇒

Detailed specifications: QS5U26, QS5U27, QS5U33, QS5U34, QS5U36, QS6J11, QS6K1, QS6K21, EMB04N03H, QS6M4, QS6U22, QS6U24, QS8F2, QS8J11, QS8J12, QS8J13, QS8J2

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.