QS6M4 Datasheet. Specs and Replacement

Type Designator: QS6M4

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TSMT6

QS6M4 substitution

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QS6M4 datasheet

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QS6M4

QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Dimensions (Unit mm) Structure Silicon P-channel MOSFET TSMT6 Silicon N-channel MOSFET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) The QS6M4 combines Pch MOSFET with a Nch 0 0.1 (1) (2) (3) MOSFET in a single TSMT6 package. 1pin mark 2) Low on-state resistance with a fast switching. 0.16 0.4 ... See More ⇒

Detailed specifications: QS5U27, QS5U33, QS5U34, QS5U36, QS6J11, QS6K1, QS6K21, QS6M3, RU7088R, QS6U22, QS6U24, QS8F2, QS8J11, QS8J12, QS8J13, QS8J2, QS8J4

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.