All MOSFET. QS6M4 Datasheet

 

QS6M4 Datasheet and Replacement


   Type Designator: QS6M4
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: TSMT6
 

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QS6M4 Datasheet (PDF)

 ..1. Size:77K  rohm
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QS6M4

QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET TSMT6Silicon N-channel MOSFET 1.0MAX2.90.851.9 0.95 0.95 0.7(6) (5) (4) Features 1) The QS6M4 combines Pch MOSFET with a Nch 0~0.1(1) (2) (3)MOSFET in a single TSMT6 package. 1pin mark2) Low on-state resistance with a fast switching. 0.160.4

Datasheet: QS5U27 , QS5U33 , QS5U34 , QS5U36 , QS6J11 , QS6K1 , QS6K21 , QS6M3 , RU7088R , QS6U22 , QS6U24 , QS8F2 , QS8J11 , QS8J12 , QS8J13 , QS8J2 , QS8J4 .

History: INJ0001AC1 | INK0002AC1 | FDP8N50NZU | INK0001BC1 | INJ0203BC1 | AP9469GM | INJ0312AP1

Keywords - QS6M4 MOSFET datasheet

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