All MOSFET. QS6U22 Datasheet

 

QS6U22 MOSFET. Datasheet pdf. Equivalent


   Type Designator: QS6U22
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 0.9 W
   Maximum Drain-Source Voltage |Vds|: 20 V
   Maximum Gate-Source Voltage |Vgs|: 12 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
   Maximum Drain Current |Id|: 1.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 3 nC
   Rise Time (tr): 12 nS
   Drain-Source Capacitance (Cd): 40 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.215 Ohm
   Package: TSMT6

 QS6U22 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QS6U22 Datasheet (PDF)

 ..1. Size:68K  rohm
qs6u22.pdf

QS6U22
QS6U22

QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.9 0.95 0.95 0.7(6) (5) (4) Features 1) The QS6U22 combines Pch MOS FET with a Schottky 0~0.1barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resistance with fast switching.

 9.1. Size:66K  rohm
qs6u24.pdf

QS6U22
QS6U22

QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.90.95 0.95 0.7(6) (5) (4) Features 1) The QS6U24 combines Pch MOS FET with a 0~0.1 Schottky barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resisternce with a fast switchi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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