All MOSFET. QS6U22 Datasheet

 

QS6U22 MOSFET. Datasheet pdf. Equivalent


   Type Designator: QS6U22
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.215 Ohm
   Package: TSMT6

 QS6U22 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QS6U22 Datasheet (PDF)

 ..1. Size:68K  rohm
 qs6u22.pdf

QS6U22 QS6U22

QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.9 0.95 0.95 0.7(6) (5) (4) Features 1) The QS6U22 combines Pch MOS FET with a Schottky 0~0.1barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resistance with fast switching.

 9.1. Size:66K  rohm
 qs6u24.pdf

QS6U22 QS6U22

QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.90.95 0.95 0.7(6) (5) (4) Features 1) The QS6U24 combines Pch MOS FET with a 0~0.1 Schottky barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resisternce with a fast switchi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: QM6007S | SI8417DB | SIA415DJ

 

 
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