QS6U22 Datasheet. Specs and Replacement

Type Designator: QS6U22

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.215 Ohm

Package: TSMT6

QS6U22 substitution

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QS6U22 datasheet

 ..1. Size:68K  rohm
 qs6u22.pdf pdf_icon

QS6U22

QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT6 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) The QS6U22 combines Pch MOS FET with a Schottky 0 0.1 barrier diode in a TSMT6 package. (1) (2) (3) 1pin mark 2) Low on-state resistance with fast switching.... See More ⇒

 9.1. Size:66K  rohm
 qs6u24.pdf pdf_icon

QS6U22

QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT6 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) The QS6U24 combines Pch MOS FET with a 0 0.1 Schottky barrier diode in a TSMT6 package. (1) (2) (3) 1pin mark 2) Low on-state resisternce with a fast switchi... See More ⇒

Detailed specifications: QS5U33, QS5U34, QS5U36, QS6J11, QS6K1, QS6K21, QS6M3, QS6M4, MMIS60R580P, QS6U24, QS8F2, QS8J11, QS8J12, QS8J13, QS8J2, QS8J4, QS8J5

Keywords - QS6U22 MOSFET specs

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