QS6U22 MOSFET. Datasheet pdf. Equivalent
Type Designator: QS6U22
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.9 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 1.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 3 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 40 pF
Maximum Drain-Source On-State Resistance (Rds): 0.215 Ohm
Package: TSMT6
QS6U22 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QS6U22 Datasheet (PDF)
qs6u22.pdf
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QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.9 0.95 0.95 0.7(6) (5) (4) Features 1) The QS6U22 combines Pch MOS FET with a Schottky 0~0.1barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resistance with fast switching.
qs6u24.pdf
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QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.90.95 0.95 0.7(6) (5) (4) Features 1) The QS6U24 combines Pch MOS FET with a 0~0.1 Schottky barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resisternce with a fast switchi
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