QS6U22 Datasheet and Replacement
Type Designator: QS6U22
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.215 Ohm
Package: TSMT6
QS6U22 substitution
QS6U22 Datasheet (PDF)
qs6u22.pdf

QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.9 0.95 0.95 0.7(6) (5) (4) Features 1) The QS6U22 combines Pch MOS FET with a Schottky 0~0.1barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resistance with fast switching.
qs6u24.pdf

QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.90.95 0.95 0.7(6) (5) (4) Features 1) The QS6U24 combines Pch MOS FET with a 0~0.1 Schottky barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resisternce with a fast switchi
Datasheet: QS5U33 , QS5U34 , QS5U36 , QS6J11 , QS6K1 , QS6K21 , QS6M3 , QS6M4 , 2N7002 , QS6U24 , QS8F2 , QS8J11 , QS8J12 , QS8J13 , QS8J2 , QS8J4 , QS8J5 .
History: SIHF9530S | AP9973GJ-HF | SFF440 | CEDM7004VL
Keywords - QS6U22 MOSFET datasheet
QS6U22 cross reference
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History: SIHF9530S | AP9973GJ-HF | SFF440 | CEDM7004VL



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