QS6U24 PDF and Equivalents Search

 

QS6U24 PDF Specs and Replacement


   Type Designator: QS6U24
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TSMT6
 

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QS6U24 PDF Specs

 ..1. Size:66K  rohm
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QS6U24

QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT6 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) The QS6U24 combines Pch MOS FET with a 0 0.1 Schottky barrier diode in a TSMT6 package. (1) (2) (3) 1pin mark 2) Low on-state resisternce with a fast switchi... See More ⇒

 9.1. Size:68K  rohm
qs6u22.pdf pdf_icon

QS6U24

QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT6 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) The QS6U22 combines Pch MOS FET with a Schottky 0 0.1 barrier diode in a TSMT6 package. (1) (2) (3) 1pin mark 2) Low on-state resistance with fast switching.... See More ⇒

Detailed specifications: QS5U34 , QS5U36 , QS6J11 , QS6K1 , QS6K21 , QS6M3 , QS6M4 , QS6U22 , AOD4184A , QS8F2 , QS8J11 , QS8J12 , QS8J13 , QS8J2 , QS8J4 , QS8J5 , QS8K11 .

Keywords - QS6U24 MOSFET specs

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