All MOSFET. QS6U24 Datasheet

 

QS6U24 MOSFET. Datasheet pdf. Equivalent


   Type Designator: QS6U24
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.7 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TSMT6

 QS6U24 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QS6U24 Datasheet (PDF)

 ..1. Size:66K  rohm
 qs6u24.pdf

QS6U24 QS6U24

QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.90.95 0.95 0.7(6) (5) (4) Features 1) The QS6U24 combines Pch MOS FET with a 0~0.1 Schottky barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resisternce with a fast switchi

 9.1. Size:68K  rohm
 qs6u22.pdf

QS6U24 QS6U24

QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.9 0.95 0.95 0.7(6) (5) (4) Features 1) The QS6U22 combines Pch MOS FET with a Schottky 0~0.1barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resistance with fast switching.

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IPB65R190CFDA | IXFH100N25P | GSM4637W

 

 
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