All MOSFET. QS6U24 Datasheet

 

QS6U24 MOSFET. Datasheet pdf. Equivalent

Type Designator: QS6U24

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.9 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.7 nC

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 25 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TSMT6

QS6U24 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

QS6U24 Datasheet (PDF)

1.1. qs6u24.pdf Size:66K _update_mosfet

QS6U24
QS6U24

QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) The QS6U24 combines Pch MOS FET with a 0~0.1 Schottky barrier diode in a TSMT6 package. (1) (2) (3) 1pin mark 2) Low on-state resisternce with a fast switchi

1.2. qs6u24.pdf Size:80K _rohm

QS6U24
QS6U24

QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) The QS6U24 combines Pch MOS FET with a 0~0.1 Schottky barrier diode in a TSMT6 package. (1) (2) (3) 1pin mark 2) Low on-state resisternce with a fast switching.

 5.1. qs6u22.pdf Size:68K _update_mosfet

QS6U24
QS6U24

QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) The QS6U22 combines Pch MOS FET with a Schottky 0~0.1 barrier diode in a TSMT6 package. (1) (2) (3) 1pin mark 2) Low on-state resistance with fast switching.

5.2. qs6u22.pdf Size:82K _rohm

QS6U24
QS6U24

QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) The QS6U22 combines Pch MOS FET with a Schottky 0~0.1 barrier diode in a TSMT6 package. (1) (2) (3) 1pin mark 2) Low on-state resistance with fast switching.

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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