All MOSFET. QS6U24 Datasheet

 

QS6U24 Datasheet and Replacement


   Type Designator: QS6U24
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TSMT6
 

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QS6U24 Datasheet (PDF)

 ..1. Size:66K  rohm
 qs6u24.pdf pdf_icon

QS6U24

QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.90.95 0.95 0.7(6) (5) (4) Features 1) The QS6U24 combines Pch MOS FET with a 0~0.1 Schottky barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resisternce with a fast switchi

 9.1. Size:68K  rohm
 qs6u22.pdf pdf_icon

QS6U24

QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6Schottky Barrier DIODE 1.0MAX2.90.851.9 0.95 0.95 0.7(6) (5) (4) Features 1) The QS6U22 combines Pch MOS FET with a Schottky 0~0.1barrier diode in a TSMT6 package. (1) (2) (3)1pin mark2) Low on-state resistance with fast switching.

Datasheet: QS5U34 , QS5U36 , QS6J11 , QS6K1 , QS6K21 , QS6M3 , QS6M4 , QS6U22 , HY1906P , QS8F2 , QS8J11 , QS8J12 , QS8J13 , QS8J2 , QS8J4 , QS8J5 , QS8K11 .

History: BUZ73AL | PMPB12UNEA | SSM3K329R | TK12A55D | MP4N150

Keywords - QS6U24 MOSFET datasheet

 QS6U24 cross reference
 QS6U24 equivalent finder
 QS6U24 lookup
 QS6U24 substitution
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