All MOSFET. QS8F2 Datasheet

 

QS8F2 Datasheet and Replacement


   Type Designator: QS8F2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: TSMT8
 

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QS8F2 Datasheet (PDF)

 ..1. Size:645K  rohm
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QS8F2

Data Sheet1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2 StructureDimensions (Unit : mm)Silicon P-channel MOSFET/TSMT8(8) (7) (6) (5)PNP TRANSISTORFeatures1) Low on-resistance.(1) (2) (3) (4)2) High power package(TSMT8).3) Low voltage drive(1.5V drive).Abbreviated symbol : F02 ApplicationSwitching Packaging specificationsInner circuit(8) (7)

Datasheet: QS5U36 , QS6J11 , QS6K1 , QS6K21 , QS6M3 , QS6M4 , QS6U22 , QS6U24 , AO3407 , QS8J11 , QS8J12 , QS8J13 , QS8J2 , QS8J4 , QS8J5 , QS8K11 , QS8K13 .

History: SDF054JAA-D | AFN04N60T220FT | DMN5L06DMKQ | AFP1073 | TK22E10N1 | GSM9435WS | APM2321AAC

Keywords - QS8F2 MOSFET datasheet

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