All MOSFET. QS8F2 Datasheet

 

QS8F2 MOSFET. Datasheet pdf. Equivalent

Type Designator: QS8F2

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 130 pF

Maximum Drain-Source On-State Resistance (Rds): 0.061 Ohm

Package: TSMT8

QS8F2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

QS8F2 Datasheet (PDF)

1.1. qs8f2.pdf Size:645K _update_mosfet

QS8F2
QS8F2

Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2  Structure Dimensions (Unit : mm) Silicon P-channel MOSFET/ TSMT8 (8) (7) (6) (5) PNP TRANSISTOR Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). Abbreviated symbol : F02  Application Switching  Packaging specifications Inner circuit (8) (7)

1.2. qs8f2.pdf Size:1301K _rohm

QS8F2
QS8F2

Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2 ? Structure ?Dimensions (Unit : mm) Silicon P-channel MOSFET/ TSMT8 (8) (7) (6) (5) PNP TRANSISTOR ?Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). Abbreviated symbol : F02 ? Application Switching ? Packaging specifications ?Inner circuit (8) (7) (6) (5) Packa

 

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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