QS8F2 PDF and Equivalents Search

 

QS8F2 Specs and Replacement


   Type Designator: QS8F2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: TSMT8
 

 QS8F2 substitution

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QS8F2 datasheet

 ..1. Size:645K  rohm
 qs8f2.pdf pdf_icon

QS8F2

Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2 Structure Dimensions (Unit mm) Silicon P-channel MOSFET/ TSMT8 (8) (7) (6) (5) PNP TRANSISTOR Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). Abbreviated symbol F02 Application Switching Packaging specifications Inner circuit (8) (7)... See More ⇒

Detailed specifications: QS5U36 , QS6J11 , QS6K1 , QS6K21 , QS6M3 , QS6M4 , QS6U22 , QS6U24 , AO4407A , QS8J11 , QS8J12 , QS8J13 , QS8J2 , QS8J4 , QS8J5 , QS8K11 , QS8K13 .

Keywords - QS8F2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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