All MOSFET. QS8J12 Datasheet

 

QS8J12 Datasheet and Replacement


   Type Designator: QS8J12
   Marking Code: J12
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 40 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TSMT8
 

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QS8J12 Datasheet (PDF)

 ..1. Size:2604K  rohm
 qs8j12.pdf pdf_icon

QS8J12

QS8J12Datasheet-12V Pch+Pch Middle Power MOSFETlOutlinel TSMT8VDSS -12VRDS(on)(Max.) 29m ID 4.5A PD 1.5W lFeaturesllInner circuitl1) Low on - resistance.2) -1.5V Drive.3) Built-in G-S Protection Diode.4) Small Surface Mount Package (TSMT8).5) Pb-fre

 9.1. Size:2759K  rohm
 qs8j13.pdf pdf_icon

QS8J12

QS8J13Datasheet-12V Pch+Pch Middle Power MOSFETlOutlinel TSMT8VDSS-12VRDS(on)(Max.) 22m ID 5.5A PD1.5W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package .3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPack

 9.2. Size:2308K  rohm
 qs8j11.pdf pdf_icon

QS8J12

QS8J11Datasheet-12V Pch +Pch Middle Power MOSFETlOutlinel TSMT8VDSS -12VRDS(on)(Max.) 43m ID 3.5A PD 1.5W lFeaturesllInner circuitl1) Low on - resistance.2) -1.5V Drive.3) Built-in G-S protection diode.4) Small surface mount package(TSMT8)5) Pb-free

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: LBSS138WT1G | S-LBSS138WT1G

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