QS8J12 MOSFET. Datasheet pdf. Equivalent
Type Designator: QS8J12
Marking Code: J12
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 12 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 40 nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.029 Ohm
Package: TSMT8
QS8J12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QS8J12 Datasheet (PDF)
1.1. qs8j12.pdf 
Size:2604K _update_mosfet
QS8J12 Datasheet -12V Pch+Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 29mΩ ID ±4.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8). 5) Pb-fre
1.2. qs8j12.pdf Size:1188K _rohm
Data Sheet 1.5V Drive Pch + Pch MOSFET QS8J12 ? Structure ? Dimensions (Unit : mm) TSMT8 Silicon P-channel MOSFET (8) (7) (6) (5) ?Features 1) Low On-resistance. (1) (2) (3) (4) 2) Small high power package. 3) Low voltage drive(1.5V drive). Abbreviated symbol : J12 ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (8) (7) (6) (5) Type Code TCR B
5.1. qs8j11.pdf Size:2308K _update_mosfet
QS8J11 Datasheet -12V Pch +Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 43mΩ ID ±3.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free
5.2. qs8j13.pdf Size:2759K _update_mosfet
QS8J13 Datasheet -12V Pch+Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 22mΩ ID ±5.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPack
5.3. qs8j11.pdf Size:1251K _rohm
Data Sheet 1.5V Drive Pch + Pch MOSFET QS8J11 ? Structure ? Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) ?Features 1) Low On-resistance. (1) (2) (3) (4) 2) Small high power package. 3) Low voltage drive(1.5V drive). Abbreviated symbol : J11 ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (8) (7) (6) (5) Type Code TCR Bas
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