QS8J12 MOSFET PDF: P-Ch, 12V, 4.5A. Datasheet. Full specification with pinout and replacement list

QS8J12 Specs and Replacement

   Type Designator: QS8J12
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TSMT8

QS8J12 substitution

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QS8J12 datasheet

..1. Size:2604K rohm
qs8j12.pdf pdf_icon

QS8J12 Datasheet -12V Pch+Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 29m ID 4.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8). 5) Pb-fre... See More ⇒

9.1. Size:2759K rohm
qs8j13.pdf pdf_icon

QS8J13 Datasheet -12V Pch+Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 22m ID 5.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPack... See More ⇒

9.2. Size:2308K rohm
qs8j11.pdf pdf_icon

QS8J11 Datasheet -12V Pch +Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 43m ID 3.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free... See More ⇒

Detailed specifications: QS6K1 , QS6K21 , QS6M3 , QS6M4 , QS6U22 , QS6U24 , QS8F2 , QS8J11 , IRFP064N , QS8J13 , QS8J2 , QS8J4 , QS8J5 , QS8K11 , QS8K13 , QS8K2 , QS8K21 .