All MOSFET. QS8J12 Datasheet

 

QS8J12 MOSFET. Datasheet pdf. Equivalent

Type Designator: QS8J12

SMD Transistor Code: J12

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40 nC

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 350 pF

Maximum Drain-Source On-State Resistance (Rds): 0.029 Ohm

Package: TSMT8

QS8J12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

QS8J12 Datasheet (PDF)

1.1. qs8j12.pdf Size:2604K _update_mosfet

QS8J12 QS8J12

QS8J12 Datasheet 　　-12V Pch+Pch Middle Power MOSFET 　　 lOutline l 　 　 　 　 　 　 TSMT8 VDSS -12V 　 RDS(on)(Max.) 29mΩ 　 　 ID ±4.5A 　 　 PD 1.5W 　 　 　 　 　 　 　 　 　 　 　 　 lFeatures l lInner circuit l 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8). 5) Pb-fre

1.2. qs8j12.pdf Size:1188K _rohm

QS8J12 QS8J12

Data Sheet 1.5V Drive Pch + Pch MOSFET QS8J12 ? Structure ? Dimensions (Unit : mm) TSMT8 Silicon P-channel MOSFET (8) (7) (6) (5) ?Features 1) Low On-resistance. (1) (2) (3) (4) 2) Small high power package. 3) Low voltage drive(1.5V drive). Abbreviated symbol : J12 ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (8) (7) (6) (5) Type Code TCR B

 5.1. qs8j13.pdf Size:2759K _update_mosfet

QS8J12 QS8J12

QS8J13 Datasheet 　　-12V Pch+Pch Middle Power MOSFET 　　 lOutline l 　 　 　 　 　 　 TSMT8 VDSS -12V 　 RDS(on)(Max.) 22mΩ 　 　 ID ±5.5A 　 　 PD 1.5W 　 　 　 　 　 　 　 　 　 　 　 　 lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPack

5.2. qs8j11.pdf Size:2308K _update_mosfet

QS8J12 QS8J12

QS8J11 Datasheet 　　-12V Pch +Pch Middle Power MOSFET 　　 lOutline l 　 　 　 　 　 　 TSMT8 VDSS -12V 　 RDS(on)(Max.) 43mΩ 　 　 ID ±3.5A 　 　 PD 1.5W 　 　 　 　 　 　 　 　 　 　 　 　 lFeatures l lInner circuit l 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free

 5.3. qs8j11.pdf Size:1251K _rohm

QS8J12 QS8J12

Data Sheet 1.5V Drive Pch + Pch MOSFET QS8J11 ? Structure ? Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) ?Features 1) Low On-resistance. (1) (2) (3) (4) 2) Small high power package. 3) Low voltage drive(1.5V drive). Abbreviated symbol : J11 ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (8) (7) (6) (5) Type Code TCR Bas

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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