QS8J13 Spec and Replacement
Type Designator: QS8J13
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 750 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TSMT8
QS8J13 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QS8J13 Specs
qs8j13.pdf
QS8J13 Datasheet -12V Pch+Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 22m ID 5.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPack... See More ⇒
qs8j11.pdf
QS8J11 Datasheet -12V Pch +Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 43m ID 3.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free... See More ⇒
qs8j12.pdf
QS8J12 Datasheet -12V Pch+Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 29m ID 4.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8). 5) Pb-fre... See More ⇒
Detailed specifications: QS6K21 , QS6M3 , QS6M4 , QS6U22 , QS6U24 , QS8F2 , QS8J11 , QS8J12 , AO4468 , QS8J2 , QS8J4 , QS8J5 , QS8K11 , QS8K13 , QS8K2 , QS8K21 , QS8M11 .
History: IXFR44N50P
Keywords - QS8J13 MOSFET specs
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History: IXFR44N50P
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