QS8J13 Datasheet. Specs and Replacement

Type Designator: QS8J13  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TSMT8

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QS8J13 datasheet

 ..1. Size:2759K  rohm
 qs8j13.pdf pdf_icon

QS8J13

QS8J13 Datasheet -12V Pch+Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 22m ID 5.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPack... See More ⇒

 9.1. Size:2308K  rohm
 qs8j11.pdf pdf_icon

QS8J13

QS8J11 Datasheet -12V Pch +Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 43m ID 3.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free... See More ⇒

 9.2. Size:2604K  rohm
 qs8j12.pdf pdf_icon

QS8J13

QS8J12 Datasheet -12V Pch+Pch Middle Power MOSFET lOutline l TSMT8 VDSS -12V RDS(on)(Max.) 29m ID 4.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8). 5) Pb-fre... See More ⇒

Detailed specifications: QS6K21, QS6M3, QS6M4, QS6U22, QS6U24, QS8F2, QS8J11, QS8J12, 2SK2842, QS8J2, QS8J4, QS8J5, QS8K11, QS8K13, QS8K2, QS8K21, QS8M11

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