All MOSFET. PHW11N50E Datasheet

 

PHW11N50E Datasheet and Replacement


   Type Designator: PHW11N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Id|ⓘ - Maximum Drain Current: 10.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: SOT429
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PHW11N50E Datasheet (PDF)

 ..1. Size:35K  philips
 php11n50e phb11n50e phw11n50e.pdf pdf_icon

PHW11N50E

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 Ag Low thermal resistanceRDS(ON) 0.6 sGENERAL DESCRIPTI

 ..2. Size:102K  philips
 phb11n50e phw11n50e 1.pdf pdf_icon

PHW11N50E

Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.9 Ag Low thermal resistanceRDS(ON) 0.55 sGENERAL DESCRIPTIONN-channel,

Datasheet: PHP80N06LT , PHP87N03LT , PHP8N50E , PHP8ND50E , PHT11N06LT , PHT6N03LT , PHT6N06LT , PHT8N06LT , IRFZ44N , PHW14N50E , PHW20N50E , PHW7N60E , PHW8N50E , PHW8ND50E , PHW9N60E , PHX2N50E , PHX2N60E .

History: WMB048NV6LG4 | 7N70G-TF1-T | BUK9Y107-80E | IRFIBE20G | AP4002J | GSM3481S | HUFA76629D3ST

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