PHW11N50E Datasheet and Replacement
Type Designator: PHW11N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Id| ⓘ - Maximum Drain Current: 10.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: SOT429
PHW11N50E substitution
PHW11N50E Datasheet (PDF)
php11n50e phb11n50e phw11n50e.pdf
Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 Ag Low thermal resistanceRDS(ON) 0.6 sGENERAL DESCRIPTI
phb11n50e phw11n50e 1.pdf
Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.9 Ag Low thermal resistanceRDS(ON) 0.55 sGENERAL DESCRIPTIONN-channel,
Datasheet: PHP80N06LT , PHP87N03LT , PHP8N50E , PHP8ND50E , PHT11N06LT , PHT6N03LT , PHT6N06LT , PHT8N06LT , IRFZ44N , PHW14N50E , PHW20N50E , PHW7N60E , PHW8N50E , PHW8ND50E , PHW9N60E , PHX2N50E , PHX2N60E .
Keywords - PHW11N50E MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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