PHW11N50E MOSFET. Datasheet pdf. Equivalent
Type Designator: PHW11N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: SOT429
PHW11N50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHW11N50E Datasheet (PDF)
php11n50e phb11n50e phw11n50e.pdf
Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 Ag Low thermal resistanceRDS(ON) 0.6 sGENERAL DESCRIPTI
phb11n50e phw11n50e 1.pdf
Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.9 Ag Low thermal resistanceRDS(ON) 0.55 sGENERAL DESCRIPTIONN-channel,
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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