All MOSFET. QS8J5 Datasheet

 

QS8J5 Datasheet and Replacement


   Type Designator: QS8J5
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TSMT8
 

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QS8J5 Datasheet (PDF)

 ..1. Size:519K  rohm
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QS8J5

QS8J5 Pch -30V -5A Power MOSFET DatasheetlOutline(8) VDSS-30V (7) TSMT8(6) (5) RDS(on) (Max.)39mW(1) ID-5A(2) (3) PD1.5W(4) lFeatures lInner circuit1) Low on - resistance.(1) Tr1 Source (5) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Small Surface Mount Package

Datasheet: QS6U22 , QS6U24 , QS8F2 , QS8J11 , QS8J12 , QS8J13 , QS8J2 , QS8J4 , IRF3205 , QS8K11 , QS8K13 , QS8K2 , QS8K21 , QS8M11 , QS8M13 , QS8M51 , RFH25N18 .

History: HY1906B | IPL60R085P7 | FS3UM-16A | NTTFS4C05NTAG | AP15P15GH-HF | SL60N10Q | 4N90

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