QS8J5 Spec and Replacement
Type Designator: QS8J5
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TSMT8
QS8J5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QS8J5 Specs
qs8j5.pdf
QS8J5 Pch -30V -5A Power MOSFET Datasheet lOutline (8) VDSS -30V (7) TSMT8 (6) (5) RDS(on) (Max.) 39mW (1) ID -5A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Small Surface Mount Package... See More ⇒
Detailed specifications: QS6U22 , QS6U24 , QS8F2 , QS8J11 , QS8J12 , QS8J13 , QS8J2 , QS8J4 , IRF3205 , QS8K11 , QS8K13 , QS8K2 , QS8K21 , QS8M11 , QS8M13 , QS8M51 , RFH25N18 .
Keywords - QS8J5 MOSFET specs
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