All MOSFET. QS8J5 Datasheet

 

QS8J5 MOSFET. Datasheet pdf. Equivalent

Type Designator: QS8J5

SMD Transistor Code: J05

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.9 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm

Package: TSMT8

QS8J5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

QS8J5 Datasheet (PDF)

1.1. qs8j5.pdf Size:519K _update_mosfet

QS8J5
QS8J5

QS8J5 Pch -30V -5A Power MOSFET Datasheet lOutline (8) VDSS -30V (7) TSMT8 (6) (5) RDS(on) (Max.) 39mW (1) ID -5A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Small Surface Mount Package

1.2. qs8j5.pdf Size:279K _rohm

QS8J5
QS8J5

4V Drive Pch + Pch MOSFET QS8J5 ? Structure ? Dimensions (Unit : mm) TSMT8 Silicon P-channel MOSFET (8) (7) (6) (5) ?Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol : J05 ? Application Switching ? Packaging specifications ? Inner circuit (8) (7) (6) (5) Package Taping Type Code TR Basic ordering un

 

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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