QS8J5 Datasheet. Specs and Replacement

Type Designator: QS8J5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TSMT8

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QS8J5 datasheet

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QS8J5

QS8J5 Pch -30V -5A Power MOSFET Datasheet lOutline (8) VDSS -30V (7) TSMT8 (6) (5) RDS(on) (Max.) 39mW (1) ID -5A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Small Surface Mount Package... See More ⇒

Detailed specifications: QS6U22, QS6U24, QS8F2, QS8J11, QS8J12, QS8J13, QS8J2, QS8J4, IRFZ44N, QS8K11, QS8K13, QS8K2, QS8K21, QS8M11, QS8M13, QS8M51, RFH25N18

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