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QS8K21 Spec and Replacement


   Type Designator: QS8K21
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: TSMT8

 QS8K21 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QS8K21 Specs

 ..1. Size:2406K  rohm
 qs8k21.pdf pdf_icon

QS8K21

QS8K21 Datasheet 45V Nch + Nch Middle Power MOSFET lOutline l TSMT8 VDSS 45V RDS(on)(Max.) 53m ID 4A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS... See More ⇒

 9.1. Size:2378K  rohm
 qs8k2.pdf pdf_icon

QS8K21

QS8K2 Datasheet 30V Nch +Nch Middle Power MOSFET lOutline l TSMT8 VDSS 30V RDS(on)(Max.) 54m ID 3.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS... See More ⇒

Detailed specifications: QS8J12 , QS8J13 , QS8J2 , QS8J4 , QS8J5 , QS8K11 , QS8K13 , QS8K2 , IRF540N , QS8M11 , QS8M13 , QS8M51 , RFH25N18 , RFH25N20 , RFH25P08 , RFH25P10 , RFH35N08 .

History: IXFP12N50PM | BL3N100E-U | BL3N100E-A

Keywords - QS8K21 MOSFET specs

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