QS8K21 Datasheet. Specs and Replacement

Type Designator: QS8K21  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: TSMT8

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QS8K21 datasheet

 ..1. Size:2406K  rohm
 qs8k21.pdf pdf_icon

QS8K21

QS8K21 Datasheet 45V Nch + Nch Middle Power MOSFET lOutline l TSMT8 VDSS 45V RDS(on)(Max.) 53m ID 4A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS... See More ⇒

 9.1. Size:2378K  rohm
 qs8k2.pdf pdf_icon

QS8K21

QS8K2 Datasheet 30V Nch +Nch Middle Power MOSFET lOutline l TSMT8 VDSS 30V RDS(on)(Max.) 54m ID 3.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS... See More ⇒

Detailed specifications: QS8J12, QS8J13, QS8J2, QS8J4, QS8J5, QS8K11, QS8K13, QS8K2, IRF1404, QS8M11, QS8M13, QS8M51, RFH25N18, RFH25N20, RFH25P08, RFH25P10, RFH35N08

Keywords - QS8K21 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs