QS8M11
MOSFET. Datasheet pdf. Equivalent
Type Designator: QS8M11
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3.5
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package: TSMT8
QS8M11
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QS8M11
Datasheet (PDF)
..1. Size:427K rohm
qs8m11.pdf 
Data Sheet4V Drive Nch + Pch MOSFETQS8M11 Structure Dimensions (Unit : mm)TSMT8Silicon N-channel MOSFET/(8) (7) (6) (5)Silicon P-channel MOSFETFeatures(1) (2) (3) (4)1) Low on-resistance.2) High power package(TSMT8).3) Low voltage drive(4V drive).Abbreviated symbol : M11 ApplicationSwitching Packaging specifications Inner circuitPackage Tapi
9.1. Size:733K rohm
qs8m13.pdf
Data Sheet4V Drive Nch + Pch MOSFET QS8M13 Structure Dimensions (Unit : mm)TSMT8Silicon N-channel MOSFET/(8) (7) (6) (5)Silicon P-channel MOSFETFeatures1) Low on-resistance.(1) (2) (3) (4)2) High power package(TSMT8).3) Low voltage drive(4V drive).Abbreviated symbol : M13 ApplicationSwitching Inner circuit(8) (7) (6) (5) Packaging specificati
9.2. Size:1346K rohm
qs8m12.pdf
Data Sheet4V Drive Nch + Pch MOSFET QS8M12 Structure Dimensions (Unit : mm)TSMT8Silicon N-channel MOSFET/(8) (7) (6) (5)Silicon P-channel MOSFETFeatures1) Low on-resistance.(1) (2) (3) (4)2) High power package(TSMT8).3) Low voltage drive(4V drive).Abbreviated symbol : M12 ApplicationSwitching Inner circuit(8) (7) (6) (5) Packaging specificati
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