All MOSFET. QS8M11 Datasheet

 

QS8M11 MOSFET. Datasheet pdf. Equivalent

Type Designator: QS8M11

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 3.5 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: TSMT8

QS8M11 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

QS8M11 Datasheet (PDF)

1.1. qs8m11.pdf Size:427K _update_mosfet

QS8M11
QS8M11

Data Sheet 4V Drive Nch + Pch MOSFET QS8M11  Structure  Dimensions (Unit : mm) TSMT8 Silicon N-channel MOSFET/ (8) (7) (6) (5) Silicon P-channel MOSFET Features (1) (2) (3) (4) 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol : M11  Application Switching  Packaging specifications  Inner circuit Package Tapi

5.1. qs8m13.pdf Size:733K _update_mosfet

QS8M11
QS8M11

Data Sheet 4V Drive Nch + Pch MOSFET QS8M13  Structure Dimensions (Unit : mm) TSMT8 Silicon N-channel MOSFET/ (8) (7) (6) (5) Silicon P-channel MOSFET Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol : M13  Application Switching Inner circuit (8) (7) (6) (5)  Packaging specificati

5.2. qs8m13.pdf Size:1399K _rohm

QS8M11
QS8M11

Data Sheet 4V Drive Nch + Pch MOSFET QS8M13 ? Structure ?Dimensions (Unit : mm) TSMT8 Silicon N-channel MOSFET/ (8) (7) (6) (5) Silicon P-channel MOSFET ?Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol : M13 ? Application Switching ?Inner circuit (8) (7) (6) (5) ? Packaging specifications Package Ta

 5.3. qs8m12.pdf Size:1346K _rohm

QS8M11
QS8M11

Data Sheet 4V Drive Nch + Pch MOSFET QS8M12 ? Structure ?Dimensions (Unit : mm) TSMT8 Silicon N-channel MOSFET/ (8) (7) (6) (5) Silicon P-channel MOSFET ?Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol : M12 ? Application Switching ?Inner circuit (8) (7) (6) (5) ? Packaging specifications (1) Tr1 So

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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