All MOSFET. QS8M51 Datasheet

 

QS8M51 MOSFET. Datasheet pdf. Equivalent

Type Designator: QS8M51

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 4.7 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 0.325 Ohm

Package: TSMT8

QS8M51 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

QS8M51 Datasheet (PDF)

1.1. qs8m51.pdf Size:596K _update_mosfet

QS8M51 QS8M51

Data Sheet 4V Drive Nch + Pch MOSFET QS8M51  Structure  Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSMT8 (8) (7) (6) (5) Silicon P-channel MOSFET Features (1) (2) (3) (4) 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8). Abbreviated symbol : M51  Application Switching  Packaging specifications  Inner circuit Pa

1.2. qs8m51.pdf Size:1268K _rohm

QS8M51 QS8M51

Data Sheet 4V Drive Nch + Pch MOSFET QS8M51 ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSMT8 (8) (7) (6) (5) Silicon P-channel MOSFET ?Features (1) (2) (3) (4) 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8). Abbreviated symbol : M51 ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (

 

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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