All MOSFET. QS8M51 Datasheet

 

QS8M51 Datasheet and Replacement


   Type Designator: QS8M51
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.325 Ohm
   Package: TSMT8
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QS8M51 Datasheet (PDF)

 ..1. Size:596K  rohm
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QS8M51

Data Sheet4V Drive Nch + Pch MOSFETQS8M51 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/ TSMT8(8) (7) (6) (5)Silicon P-channel MOSFETFeatures(1) (2) (3) (4)1) Low on-resistance.2) Low voltage drive (4V drive).3) Small surface mount package (TSMT8).Abbreviated symbol : M51 ApplicationSwitching Packaging specifications Inner circuitPa

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRLW540A | SGM3055 | 2SK2705 | IRC820 | BS170P | LSDN65R380GT | KF80N08F

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