QS8M51 PDF and Equivalents Search

 

QS8M51 Specs and Replacement

Type Designator: QS8M51

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 30 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.325 Ohm

Package: TSMT8

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QS8M51 datasheet

 ..1. Size:596K  rohm
 qs8m51.pdf pdf_icon

QS8M51

Data Sheet 4V Drive Nch + Pch MOSFET QS8M51 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ TSMT8 (8) (7) (6) (5) Silicon P-channel MOSFET Features (1) (2) (3) (4) 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8). Abbreviated symbol M51 Application Switching Packaging specifications Inner circuit Pa... See More ⇒

Detailed specifications: QS8J4 , QS8J5 , QS8K11 , QS8K13 , QS8K2 , QS8K21 , QS8M11 , QS8M13 , IRFP460 , RFH25N18 , RFH25N20 , RFH25P08 , RFH25P10 , RFH35N08 , RFH35N10 , RFH45N05 , RFH45N06 .

History: FDG6322C

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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