QS8M51 MOSFET. Datasheet pdf. Equivalent
Type Designator: QS8M51
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 4.7 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 30 pF
Maximum Drain-Source On-State Resistance (Rds): 0.325 Ohm
Package: TSMT8
QS8M51 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QS8M51 Datasheet (PDF)
1.1. qs8m51.pdf 
Size:596K _update_mosfet
Data Sheet 4V Drive Nch + Pch MOSFET QS8M51 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSMT8 (8) (7) (6) (5) Silicon P-channel MOSFET Features (1) (2) (3) (4) 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8). Abbreviated symbol : M51 Application Switching Packaging specifications Inner circuit Pa
1.2. qs8m51.pdf Size:1268K _rohm
Data Sheet 4V Drive Nch + Pch MOSFET QS8M51 ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSMT8 (8) (7) (6) (5) Silicon P-channel MOSFET ?Features (1) (2) (3) (4) 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8). Abbreviated symbol : M51 ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (
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