All MOSFET. QS8M51 Datasheet

 

QS8M51 Datasheet and Replacement


   Type Designator: QS8M51
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.325 Ohm
   Package: TSMT8
 

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QS8M51 Datasheet (PDF)

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QS8M51

Data Sheet4V Drive Nch + Pch MOSFETQS8M51 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/ TSMT8(8) (7) (6) (5)Silicon P-channel MOSFETFeatures(1) (2) (3) (4)1) Low on-resistance.2) Low voltage drive (4V drive).3) Small surface mount package (TSMT8).Abbreviated symbol : M51 ApplicationSwitching Packaging specifications Inner circuitPa

Datasheet: QS8J4 , QS8J5 , QS8K11 , QS8K13 , QS8K2 , QS8K21 , QS8M11 , QS8M13 , IRF640 , RFH25N18 , RFH25N20 , RFH25P08 , RFH25P10 , RFH35N08 , RFH35N10 , RFH45N05 , RFH45N06 .

History: HGD190N15SL | IXTK90P20P | RTL035N03TR | CHM4431JGP | IXFE48N50Q | OSG65R290KF | 2N7002BKT

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