All MOSFET. PHW14N50E Datasheet

 

PHW14N50E Datasheet and Replacement


   Type Designator: PHW14N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT429
 

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PHW14N50E Datasheet (PDF)

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PHW14N50E

Philips Semiconductors Product specification PowerMOS transistors PHW14N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 14 Ag Low thermal resistanceRDS(ON) 0.4 sGENERAL DESCRIPTION PINNING SOT429 (TO247)N

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: PHW8N50E

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