PHW14N50E Specs and Replacement

Type Designator: PHW14N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: SOT429

PHW14N50E substitution

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PHW14N50E datasheet

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PHW14N50E

Philips Semiconductors Product specification PowerMOS transistors PHW14N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 14 A g Low thermal resistance RDS(ON) 0.4 s GENERAL DESCRIPTION PINNING SOT429 (TO247) N... See More ⇒

Detailed specifications: PHP87N03LT, PHP8N50E, PHP8ND50E, PHT11N06LT, PHT6N03LT, PHT6N06LT, PHT8N06LT, PHW11N50E, IRF3205, PHW20N50E, PHW7N60E, PHW8N50E, PHW8ND50E, PHW9N60E, PHX2N50E, PHX2N60E, PHX3N40E

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs