PHW20N50E Specs and Replacement
Type Designator: PHW20N50E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: SOT429
PHW20N50E substitution
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PHW20N50E datasheet
phw20n50e 2.pdf
Philips Semiconductors Product specification PowerMOS transistors PHW20N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 20 A g Low thermal resistance RDS(ON) 0.27 s GENERAL DESCRIPTION PINNING SOT429 (TO247) ... See More ⇒
Detailed specifications: PHP8N50E, PHP8ND50E, PHT11N06LT, PHT6N03LT, PHT6N06LT, PHT8N06LT, PHW11N50E, PHW14N50E, IRF740, PHW7N60E, PHW8N50E, PHW8ND50E, PHW9N60E, PHX2N50E, PHX2N60E, PHX3N40E, PHX3N50E
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