All MOSFET. PHW20N50E Datasheet

 

PHW20N50E Datasheet and Replacement


   Type Designator: PHW20N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: SOT429
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PHW20N50E Datasheet (PDF)

 ..1. Size:92K  philips
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PHW20N50E

Philips Semiconductors Product specification PowerMOS transistors PHW20N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 20 Ag Low thermal resistanceRDS(ON) 0.27 sGENERAL DESCRIPTION PINNING SOT429 (TO247)

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