RFK35N10 PDF and Equivalents Search

 

RFK35N10 Specs and Replacement


   Type Designator: RFK35N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 225 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO-204AE
 

 RFK35N10 substitution

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RFK35N10 datasheet

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RFK35N10

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Detailed specifications: RFH25P10 , RFH35N08 , RFH35N10 , RFH45N05 , RFH45N06 , RFK25P08 , RFK25P10 , RFK35N08 , AON6414A , RFM10N12 , RFM10N15 , RFM12N08 , RFM12N08L , RFM12N10 , RFM12N10L , RFM12N18 , RFM12N20 .

Keywords - RFK35N10 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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