RFK35N10 Specs and Replacement
Type Designator: RFK35N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 225 nS
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO-204AE
RFK35N10 substitution
- MOSFET ⓘ Cross-Reference Search
RFK35N10 datasheet
Detailed specifications: RFH25P10 , RFH35N08 , RFH35N10 , RFH45N05 , RFH45N06 , RFK25P08 , RFK25P10 , RFK35N08 , AON6414A , RFM10N12 , RFM10N15 , RFM12N08 , RFM12N08L , RFM12N10 , RFM12N10L , RFM12N18 , RFM12N20 .
Keywords - RFK35N10 MOSFET specs
RFK35N10 cross reference
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RFK35N10 replacement
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