RFM15N12 Datasheet. Specs and Replacement

Type Designator: RFM15N12

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO-204AA

RFM15N12 substitution

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RFM15N12 datasheet

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2N7224 SEME IRFM150 LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 13.59 (0.535) 6.32 (0.249) POWER MOSFET 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) VDSS 100V ID(cont) 34A RDS(on) 0.070 1 2 3 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE 0.89 (0.035) 1.14 (0... See More ⇒

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Detailed specifications: RFM12N10, RFM12N10L, RFM12N18, RFM12N20, RFM12P08, RFM12P10, RFM15N05L, RFM15N06L, IRF9540N, RFM15N15, RFM25N05, RFM25N06, RFM5P12, RFM5P15, RFM8P08, RFM8P10, RFP10N12

Keywords - RFM15N12 MOSFET specs

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