RFM25N05 Datasheet. Specs and Replacement

Type Designator: RFM25N05

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO-204AA

RFM25N05 substitution

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RFM25N05 datasheet

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RFM25N05

PD - 90554E IRFM250 JANTX2N7225 JANTXV2N7225 POWER MOSFET REF MIL-PRF-19500/592 THRU-HOLE (TO-254AA) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM250 0.100 27.4A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- ... See More ⇒

 9.2. Size:60K  njs
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 9.3. Size:41K  semelab
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RFM25N05

IRFM250D MECHANICAL DATA N CHANNEL Dimensions in mm (inches) POWER MOSFET VDSS 200V ID(cont) 27.4A RDS(on) 0.100 FEATURES N CHANNEL MOSFET ... See More ⇒

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Detailed specifications: RFM12N18, RFM12N20, RFM12P08, RFM12P10, RFM15N05L, RFM15N06L, RFM15N12, RFM15N15, IRLB4132, RFM25N06, RFM5P12, RFM5P15, RFM8P08, RFM8P10, RFP10N12, RFP10N15, RFP12N08

Keywords - RFM25N05 MOSFET specs

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