All MOSFET. PHW9N60E Datasheet

 

PHW9N60E Datasheet and Replacement


   Type Designator: PHW9N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 130 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT429
 

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PHW9N60E Datasheet (PDF)

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PHW9N60E

Philips Semiconductors Product specification PowerMOS transistors PHB9N60E, PHW9N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 8.7 Ag Low thermal resistanceRDS(ON) 0.8 sGENERAL DESCRIPTIONN-channel, enh

Datasheet: PHT6N06LT , PHT8N06LT , PHW11N50E , PHW14N50E , PHW20N50E , PHW7N60E , PHW8N50E , PHW8ND50E , IRF540N , PHX2N50E , PHX2N60E , PHX3N40E , PHX3N50E , PHX3N60E , PHX4N60E , PHX4ND40E , PHX6N60E .

History: PHW20N50E | IXTP1N80 | FDS8935 | WSP4812 | SP2107

Keywords - PHW9N60E MOSFET datasheet

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