All MOSFET. PHW9N60E Datasheet

 

PHW9N60E Datasheet and Replacement


   Type Designator: PHW9N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id|ⓘ - Maximum Drain Current: 8.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT429
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PHW9N60E Datasheet (PDF)

 ..1. Size:102K  philips
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PHW9N60E

Philips Semiconductors Product specification PowerMOS transistors PHB9N60E, PHW9N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 8.7 Ag Low thermal resistanceRDS(ON) 0.8 sGENERAL DESCRIPTIONN-channel, enh

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STK2NA60 | MTB12N03J3 | 2SK3089 | ASDM30P11TD-R | WSF20N20 | MTB60B06Q8 | IRF530NPBF

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