RHP030N03T100 Datasheet and Replacement
Type Designator: RHP030N03T100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: MPT3
RHP030N03T100 substitution
RHP030N03T100 Datasheet (PDF)
rhp030n03t100.pdf

RHP030N03 Transistors 4V Drive Nch MOSFET RHP030N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT34.51.5 1.6 Features 1) Low On-resistance. (1) (2) (3)2) 4V drive. 0.40.50.4 0.41.5 1.53.0(1)Gate Applications(2)DrainSwitching (3)Source Abbreviated symbol : KZ Packaging specifications Inner circuit (3)Package TapingType Code
rhp030n03.pdf

RHP030N03 Transistors 4V Drive Nch MOSFET RHP030N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT34.51.5 1.6 Features 1) Low On-resistance. (1) (2) (3)2) 4V drive. 0.40.50.4 0.41.5 1.53.0(1)Gate Applications(2)DrainSwitching (3)Source Abbreviated symbol : KZ Packaging specifications Inner circuit (3)Package TapingType Code
Datasheet: RFP5P12 , RFP5P15 , RFP8P08 , RHK003N06FRA , RHK003N06T146 , RHK005N03FRA , RHK005N03T146 , RHP020N06T100 , STF13NM60N , RHU002N06 , RHU002N06FRA , RHU003N03 , RHU003N03FRA , RJJ0601JPE , RJJ0601JPN , RJK005N03FRA , RJK005N03T146 .
History: RFP5P12 | IRF820ASPBF | IRFY430CM
Keywords - RHP030N03T100 MOSFET datasheet
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History: RFP5P12 | IRF820ASPBF | IRFY430CM



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