PHX4ND40E
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHX4ND40E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8
Ohm
Package:
SOT186A
PHX4ND40E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHX4ND40E
Datasheet (PDF)
..1. Size:72K philips
phx4nd40e.pdf 
Philips Semiconductors Product specification PowerMOS transistors PHX4ND40E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 400 V Fast switching Stable off-state characteristics ID = 2.7 A High thermal cycling performanceg Isolated package RDS(ON) 1.8 Fast reverse recovery diodetrr = 180 ns
9.1. Size:83K philips
phx4n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.4 Ag Isolated packageRDS(ON) 2.5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh
9.2. Size:24K philips
phx4n50e 1.pdf
Philips Semiconductors Objective specification PowerMOS transistor PHX4N50E Isolated version of PHP4N50EGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a fullpack, plastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 2.9 Ablocking volt
Datasheet: PHW8ND50E
, PHW9N60E
, PHX2N50E
, PHX2N60E
, PHX3N40E
, PHX3N50E
, PHX3N60E
, PHX4N60E
, IRFP260N
, PHX6N60E
, PHX6NA60E
, PHX6ND50E
, PHX7N60E
, PHX8N50E
, PHX8ND50E
, PMBF4391
, PMBF4392
.
