PHX4ND40E Specs and Replacement

Type Designator: PHX4ND40E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: SOT186A

PHX4ND40E substitution

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PHX4ND40E datasheet

 ..1. Size:72K  philips
phx4nd40e.pdf pdf_icon

PHX4ND40E

Philips Semiconductors Product specification PowerMOS transistors PHX4ND40E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 400 V Fast switching Stable off-state characteristics ID = 2.7 A High thermal cycling performance g Isolated package RDS(ON) 1.8 Fast reverse recovery diode trr = 180 ns... See More ⇒

 9.1. Size:83K  philips
phx4n60e.pdf pdf_icon

PHX4ND40E

Philips Semiconductors Product specification PowerMOS transistors PHX4N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.4 A g Isolated package RDS(ON) 2.5 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh... See More ⇒

 9.2. Size:24K  philips
phx4n50e 1.pdf pdf_icon

PHX4ND40E

Philips Semiconductors Objective specification PowerMOS transistor PHX4N50E Isolated version of PHP4N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a full pack, plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 2.9 A blocking volt... See More ⇒

Detailed specifications: PHW8ND50E, PHW9N60E, PHX2N50E, PHX2N60E, PHX3N40E, PHX3N50E, PHX3N60E, PHX4N60E, IRFB4110, PHX6N60E, PHX6NA60E, PHX6ND50E, PHX7N60E, PHX8N50E, PHX8ND50E, PMBF4391, PMBF4392

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs