PHX4ND40E MOSFET. Datasheet pdf. Equivalent
Type Designator: PHX4ND40E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: SOT186A
PHX4ND40E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHX4ND40E Datasheet (PDF)
phx4nd40e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX4ND40E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 400 V Fast switching Stable off-state characteristics ID = 2.7 A High thermal cycling performanceg Isolated package RDS(ON) 1.8 Fast reverse recovery diodetrr = 180 ns
phx4n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.4 Ag Isolated packageRDS(ON) 2.5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh
phx4n50e 1.pdf
Philips Semiconductors Objective specification PowerMOS transistor PHX4N50E Isolated version of PHP4N50EGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a fullpack, plastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 2.9 Ablocking volt
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