Philips Semiconductors Product specification PowerMOS transistors PHX4ND40E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 400 V Fast switching Stable off-state characteristics ID = 2.7 A High thermal cycling performanceg Isolated package RDS(ON) 1.8 Fast reverse recovery diodetrr = 180 ns

Philips Semiconductors Product specification PowerMOS transistors PHX4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.4 Ag Isolated packageRDS(ON) 2.5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

Philips Semiconductors Objective specification PowerMOS transistor PHX4N50E Isolated version of PHP4N50EGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a fullpack, plastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 2.9 Ablocking volt