All MOSFET. RJM0603JSC Datasheet

 

RJM0603JSC MOSFET. Datasheet pdf. Equivalent

Type Designator: RJM0603JSC

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 54 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 43 nC

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 290 pF

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: HSOP-20

RJM0603JSC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJM0603JSC Datasheet (PDF)

1.1. rjm0603jsc.pdf Size:148K _update_mosfet

RJM0603JSC RJM0603JSC

 Preliminary Datasheet RJM0603JSC R07DS0339EJ0501 Silicon N/P Channel Power MOS FET (6 in 1 Type) Rev.5.01 High Speed Power Switching Jul 22, 2011 Features  For Automotive applications  AEC-Q101 compliant  N/P Channel MOS FET (6 in 1 Type). High density mounting  Low on-resistance  Capable of 4.5 V gate drive Outline RENESAS Package Code: PRSP0020DF-A (P

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