All MOSFET. RJM0603JSC Datasheet

 

RJM0603JSC Datasheet and Replacement


   Type Designator: RJM0603JSC
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: HSOP-20
 

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RJM0603JSC Datasheet (PDF)

 ..1. Size:148K  renesas
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RJM0603JSC

Preliminary Datasheet RJM0603JSC R07DS0339EJ0501Silicon N/P Channel Power MOS FET (6 in 1 Type) Rev.5.01High Speed Power Switching Jul 22, 2011Features For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting Low on-resistance Capable of 4.5 V gate drive Outline RENESAS Package Code: PRSP0020DF-A(P

Datasheet: RJK6036DP3-A0 , RJL5012DPP , RJL5013DPP , RJL5014DPP , RJL6012DPP , RJL6013DPP , RJL6014DPP , RJM0404JSC , TK10A60D , RJP020N06T100 , RJU002N06FRA , RJU002N06T106 , RJU003N03FRA , RJU003N03T106 , RK3055ETL , RK7002AT116 , RK7002BM .

History: HAF2002 | SM2558NUB | IRL630A | HY3008P | 2SK4096LS-1E | FDC610PZ | IRFL210PBF

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