RJM0603JSC Specs and Replacement

Type Designator: RJM0603JSC

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: HSOP-20

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RJM0603JSC datasheet

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RJM0603JSC

Preliminary Datasheet RJM0603JSC R07DS0339EJ0501 Silicon N/P Channel Power MOS FET (6 in 1 Type) Rev.5.01 High Speed Power Switching Jul 22, 2011 Features For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting Low on-resistance Capable of 4.5 V gate drive Outline RENESAS Package Code PRSP0020DF-A (P... See More ⇒

Detailed specifications: RJK6036DP3-A0, RJL5012DPP, RJL5013DPP, RJL5014DPP, RJL6012DPP, RJL6013DPP, RJL6014DPP, RJM0404JSC, 13N50, RJP020N06T100, RJU002N06FRA, RJU002N06T106, RJU003N03FRA, RJU003N03T106, RK3055ETL, RK7002AT116, RK7002BM

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