All MOSFET. RK3055ETL Datasheet

 

RK3055ETL Datasheet and Replacement


   Type Designator: RK3055ETL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: CPT3
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RK3055ETL Datasheet (PDF)

 ..1. Size:88K  rohm
 rk3055etl.pdf pdf_icon

RK3055ETL

RK3055E Transistors 10V Drive Nch MOSFET RK3055E Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT36.5 5.12.30.5 Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.754) 10V drive. 0.650.92.3(1)Gate5) Drive circuits can be simple. 2.3(1) (2) (3)0.5(2)Drain1.06) Parallel use is easy. (3

 7.1. Size:135K  rohm
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RK3055ETL

TransistorsSmall switching (60V, 8A)RK3055EFFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Low-voltage drive.5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications182Transistors RK3055E

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History: SM2A18NSV | NCEP045N10D | NDS0610 | IXTK100N25P | 40841 | GFB70N03 | IRFH7446TRPBF

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