RK3055ETL Specs and Replacement

Type Designator: RK3055ETL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: CPT3

RK3055ETL substitution

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RK3055ETL datasheet

 ..1. Size:88K  rohm
 rk3055etl.pdf pdf_icon

RK3055ETL

RK3055E Transistors 10V Drive Nch MOSFET RK3055E Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 0.5 Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.75 4) 10V drive. 0.65 0.9 2.3 (1)Gate 5) Drive circuits can be simple. 2.3 (1) (2) (3) 0.5 (2)Drain 1.0 6) Parallel use is easy. (3... See More ⇒

 7.1. Size:135K  rohm
 rk3055e.pdf pdf_icon

RK3055ETL

Transistors Small switching (60V, 8A) RK3055E FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 182 Transistors RK3055E... See More ⇒

Detailed specifications: RJL6014DPP, RJM0404JSC, RJM0603JSC, RJP020N06T100, RJU002N06FRA, RJU002N06T106, RJU003N03FRA, RJU003N03T106, AON6380, RK7002AT116, RK7002BM, RK7002BT116, RK7002T116, RND030N20, RP1A090ZPTR, RP1E050RPTR, RP1E090RPTR

Keywords - RK3055ETL MOSFET specs

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