RND030N20 Specs and Replacement
Type Designator: RND030N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.87 Ohm
Package: SC-63
RND030N20 substitution
- MOSFET ⓘ Cross-Reference Search
RND030N20 datasheet
rnd030n20.pdf
RND030N20 Nch 200V 3.0A Power MOSFET Datasheet Outline VDSS 200V CPT3 (SC-63) RDS(on) (Max.) 870m (3) ID 3.0A (2) (1) PD 20W Features Inner circuit (3) 1) Low on-resistance. 1 * (1) Gate 2) Fast switching speed. (2) Drain (1) 3) Drive circuits can be simple. (3) Source 2 * 4) Parallel use is easy. 1 ESD PROTECTION DIODE 2 BODY DIODE ... See More ⇒
Detailed specifications: RJU002N06T106, RJU003N03FRA, RJU003N03T106, RK3055ETL, RK7002AT116, RK7002BM, RK7002BT116, RK7002T116, STP80NF70, RP1A090ZPTR, RP1E050RPTR, RP1E090RPTR, RP1E100RPTR, RQ1A060ZPTR, RQ1A070ZPTR, RQ1E050RPTR, RQ3E070BN
Keywords - RND030N20 MOSFET specs
RND030N20 cross reference
RND030N20 equivalent finder
RND030N20 pdf lookup
RND030N20 substitution
RND030N20 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
