RND030N20 Datasheet and Replacement
Type Designator: RND030N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.87 Ohm
Package: SC-63
RND030N20 substitution
RND030N20 Datasheet (PDF)
rnd030n20.pdf
RND030N20Nch 200V 3.0A Power MOSFET DatasheetOutlineVDSS200VCPT3(SC-63)RDS(on) (Max.)870m(3)ID3.0A(2)(1)PD20WFeatures Inner circuit(3) 1) Low on-resistance.1*(1) Gate2) Fast switching speed.(2) Drain(1) 3) Drive circuits can be simple.(3) Source2*4) Parallel use is easy.1 ESD PROTECTION DIODE2 BODY DIODE
Datasheet: RJU002N06T106 , RJU003N03FRA , RJU003N03T106 , RK3055ETL , RK7002AT116 , RK7002BM , RK7002BT116 , RK7002T116 , STP80NF70 , RP1A090ZPTR , RP1E050RPTR , RP1E090RPTR , RP1E100RPTR , RQ1A060ZPTR , RQ1A070ZPTR , RQ1E050RPTR , RQ3E070BN .
History: IPW60R125CP | AP9976GP | AP9970GW-HF | AP9997GP | RSD050N10FRA | UTT30P06L-TQ2-R | UTT30P06G-TN3-R
Keywords - RND030N20 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IPW60R125CP | AP9976GP | AP9970GW-HF | AP9997GP | RSD050N10FRA | UTT30P06L-TQ2-R | UTT30P06G-TN3-R
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