All MOSFET. RND030N20 Datasheet

 

RND030N20 Datasheet and Replacement


   Type Designator: RND030N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.87 Ohm
   Package: SC-63
 

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RND030N20 Datasheet (PDF)

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RND030N20

RND030N20Nch 200V 3.0A Power MOSFET DatasheetOutlineVDSS200VCPT3(SC-63)RDS(on) (Max.)870m(3)ID3.0A(2)(1)PD20WFeatures Inner circuit(3) 1) Low on-resistance.1*(1) Gate2) Fast switching speed.(2) Drain(1) 3) Drive circuits can be simple.(3) Source2*4) Parallel use is easy.1 ESD PROTECTION DIODE2 BODY DIODE

Datasheet: RJU002N06T106 , RJU003N03FRA , RJU003N03T106 , RK3055ETL , RK7002AT116 , RK7002BM , RK7002BT116 , RK7002T116 , 20N50 , RP1A090ZPTR , RP1E050RPTR , RP1E090RPTR , RP1E100RPTR , RQ1A060ZPTR , RQ1A070ZPTR , RQ1E050RPTR , RQ3E070BN .

History: CTD03N4P3 | CEB13N5 | AP3A010MT | HY1603U | HM70N80A | AP4910GD | WFP8N60

Keywords - RND030N20 MOSFET datasheet

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