RP1A090ZPTR Specs and Replacement

Type Designator: RP1A090ZPTR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: MPT6

RP1A090ZPTR substitution

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RP1A090ZPTR datasheet

 ..1. Size:313K  rohm
 rp1a090zptr.pdf pdf_icon

RP1A090ZPTR

1.5V Drive Pch MOSFET RP1A090ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low Voltage Drive(1.5V drive). 2) Built-in G-S Protection Diode. (1) (2) (3) 3) Small Surface Mount Package (MPT6). Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR Basic ord... See More ⇒

 5.1. Size:315K  rohm
 rp1a090zp.pdf pdf_icon

RP1A090ZPTR

1.5V Drive Pch MOSFET RP1A090ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low Voltage Drive(1.5V drive). 2) Built-in G-S Protection Diode. (1) (2) (3) 3) Small Surface Mount Package (MPT6). Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR Basic ord... See More ⇒

Detailed specifications: RJU003N03FRA, RJU003N03T106, RK3055ETL, RK7002AT116, RK7002BM, RK7002BT116, RK7002T116, RND030N20, IRFP450, RP1E050RPTR, RP1E090RPTR, RP1E100RPTR, RQ1A060ZPTR, RQ1A070ZPTR, RQ1E050RPTR, RQ3E070BN, RQ3E080BN

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.