All MOSFET. RP1A090ZPTR Datasheet

 

RP1A090ZPTR Datasheet and Replacement


   Type Designator: RP1A090ZPTR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: MPT6
 

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RP1A090ZPTR Datasheet (PDF)

 ..1. Size:313K  rohm
 rp1a090zptr.pdf pdf_icon

RP1A090ZPTR

1.5V Drive Pch MOSFET RP1A090ZP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low Voltage Drive(1.5V drive).2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TRBasic ord

 5.1. Size:315K  rohm
 rp1a090zp.pdf pdf_icon

RP1A090ZPTR

1.5V Drive Pch MOSFET RP1A090ZP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low Voltage Drive(1.5V drive).2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TRBasic ord

Datasheet: RJU003N03FRA , RJU003N03T106 , RK3055ETL , RK7002AT116 , RK7002BM , RK7002BT116 , RK7002T116 , RND030N20 , IRF1407 , RP1E050RPTR , RP1E090RPTR , RP1E100RPTR , RQ1A060ZPTR , RQ1A070ZPTR , RQ1E050RPTR , RQ3E070BN , RQ3E080BN .

History: HTM200P03 | HTD200P03 | FQA13N80 | 2N7002NXBK | TSM2312CX | BSC050N03MS | EKI07117

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