RP1A090ZPTR Datasheet and Replacement
Type Designator: RP1A090ZPTR
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: MPT6
RP1A090ZPTR substitution
RP1A090ZPTR Datasheet (PDF)
rp1a090zptr.pdf
1.5V Drive Pch MOSFET RP1A090ZP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low Voltage Drive(1.5V drive).2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TRBasic ord
rp1a090zp.pdf
1.5V Drive Pch MOSFET RP1A090ZP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low Voltage Drive(1.5V drive).2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TRBasic ord
Datasheet: RJU003N03FRA , RJU003N03T106 , RK3055ETL , RK7002AT116 , RK7002BM , RK7002BT116 , RK7002T116 , RND030N20 , IRFP450 , RP1E050RPTR , RP1E090RPTR , RP1E100RPTR , RQ1A060ZPTR , RQ1A070ZPTR , RQ1E050RPTR , RQ3E070BN , RQ3E080BN .
History: UTT30P06L-TQ2-T | AP9971GJ-HF | AP9970GW-HF | AP9997GP | IRH7150 | UTT30P06L-TQ2-R | UTT30P06G-TN3-R
Keywords - RP1A090ZPTR MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: UTT30P06L-TQ2-T | AP9971GJ-HF | AP9970GW-HF | AP9997GP | IRH7150 | UTT30P06L-TQ2-R | UTT30P06G-TN3-R
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