RQ3E070BN Specs and Replacement

Type Designator: RQ3E070BN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: HSMT8

RQ3E070BN substitution

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RQ3E070BN datasheet

 ..1. Size:2641K  rohm
 rq3e070bn.pdf pdf_icon

RQ3E070BN

RQ3E070BN Datasheet Nch 30V 7A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 27m ID 7A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackaging ... See More ⇒

 9.1. Size:2648K  rohm
 rq3e080bn.pdf pdf_icon

RQ3E070BN

RQ3E080BN Datasheet Nch 30V 8A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 15.2m ID 8A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagin... See More ⇒

 9.2. Size:473K  rohm
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RQ3E070BN

RQ3E080GN Nch 30V 8A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 16.7mW RDS(on) at 4.5V (Max.) 22.8mW ID 8A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY D... See More ⇒

Detailed specifications: RND030N20, RP1A090ZPTR, RP1E050RPTR, RP1E090RPTR, RP1E100RPTR, RQ1A060ZPTR, RQ1A070ZPTR, RQ1E050RPTR, 2SK3568, RQ3E080BN, RQ3E080GN, RQ3E100BN, RQ3E100GN, RQ3E100MN, RQ3E120AT, RQ3E120BN, RQ3E120GN

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