All MOSFET. RQ3E080GN Datasheet

 

RQ3E080GN Datasheet and Replacement


   Type Designator: RQ3E080GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 89 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0167 Ohm
   Package: HSMT8
 

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RQ3E080GN Datasheet (PDF)

 ..1. Size:473K  rohm
 rq3e080gn.pdf pdf_icon

RQ3E080GN

RQ3E080GN Nch 30V 8A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)16.7mWRDS(on) at 4.5V (Max.)22.8mWID8APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D

 7.1. Size:2648K  rohm
 rq3e080bn.pdf pdf_icon

RQ3E080GN

RQ3E080BNDatasheetNch 30V 8A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 15.2m ID 8A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagin

 9.1. Size:2641K  rohm
 rq3e070bn.pdf pdf_icon

RQ3E080GN

RQ3E070BNDatasheetNch 30V 7A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 27m ID 7A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackaging

Datasheet: RP1E050RPTR , RP1E090RPTR , RP1E100RPTR , RQ1A060ZPTR , RQ1A070ZPTR , RQ1E050RPTR , RQ3E070BN , RQ3E080BN , 13N50 , RQ3E100BN , RQ3E100GN , RQ3E100MN , RQ3E120AT , RQ3E120BN , RQ3E120GN , RQ3E130BN , RQ3E130MN .

History: TPM7002ER3 | KI2300 | APTC60DAM18CTG | ELM56801EA | DMP6110SSD | EM6K7 | HUFA75829D3S

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